61
TÍTULO: Electrical characterization of CVD diamond-n(+) silicon junctions  Full Text
AUTORES: Rodrigues, AM; Gomes, HL ; Stallinga, P ; Pereira, L; Pereira, E;
PUBLICAÇÃO: 2001, FONTE: 11th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2000) in DIAMOND AND RELATED MATERIALS, VOLUME: 10, NÚMERO: 3-7
INDEXADO EM: Scopus WOS CrossRef: 13
NO MEU: ORCID
62
TÍTULO: Electrical characterization of pn-junctions of PPV and silicon  Full Text
AUTORES: Stallinga, P ; Gomes, HL ; Charas, A ; Morgado, J ; Alcacer, L ;
PUBLICAÇÃO: 2001, FONTE: 16th International Conference on Science and Technology of Synthetic Metals (ICSM 2000) in SYNTHETIC METALS, VOLUME: 121, NÚMERO: 1-3
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
63
TÍTULO: Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization  Full Text
AUTORES: Stallinga, P ; Gomes, HL ; Rost, H; Holmes, AB; Harrison, MG; Friend, RH;
PUBLICAÇÃO: 2001, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 89, NÚMERO: 3
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
64
TÍTULO: Electronic levels in MEH-PPV  Full Text
AUTORES: Stallinga, P ; Gomes, HL ; Rost, H; Holmes, AB; Harrison, MG; Friend, RH;
PUBLICAÇÃO: 2000, FONTE: 2nd International Conference on Electroluminescene of Molecular Materials and Related Phenomena (ICEL-2) in SYNTHETIC METALS, VOLUME: 111
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
65
TÍTULO: Microelectrical characterisation of diamond films: an attempt to understand the structural influence on electrical transport phenomena  Full Text
AUTORES: Pereira, L; Pereira, E; Gomes, H ; Rodrigues, A ; Rees, A; Cremades, A; Piqueras, J;
PUBLICAÇÃO: 2000, FONTE: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999) in DIAMOND AND RELATED MATERIALS, VOLUME: 9, NÚMERO: 3-6
INDEXADO EM: Scopus WOS CrossRef: 11
NO MEU: ORCID
66
TÍTULO: Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure
AUTORES: Pereira, L; Pereira, E; Rodrigues, A; Gomes, H ;
PUBLICAÇÃO: 2000, FONTE: 11th International Semiconducting and Insulating Materials Conference (SIMC-XI) in SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS
INDEXADO EM: WOS
67
TÍTULO: UV and visible photoconductivity of undoped diamond films: morphology and related electrical transport phenomena  Full Text
AUTORES: Pereira, L; Pereira, E; Gomes, H ;
PUBLICAÇÃO: 2000, FONTE: IUMRS-ICAM 1999 Meeting in DIAMOND AND RELATED MATERIALS, VOLUME: 9, NÚMERO: 9-10
INDEXADO EM: Scopus WOS CrossRef: 2
NO MEU: ORCID
68
TÍTULO: Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods  Full Text
AUTORES: Gomes, HL ; Stallinga, P ; Rost, H; Holmes, AB; Harrison, MG; Friend, RH;
PUBLICAÇÃO: 1999, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 74, NÚMERO: 8
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
69
TÍTULO: Determination of deep and shallow levels in conjugated polymers by electrical methods  Full Text
AUTORES: Stallinga, P ; Gomes, HL ; Rost, H; Holmes, AB; Harrison, MG; Friend, RH; Biscarini, F; Taliani, C; Jones, GW; Taylor, DM;
PUBLICAÇÃO: 1999, FONTE: 20th International Conference on Defects in Semiconductors (ICDS-20) in PHYSICA B-CONDENSED MATTER, VOLUME: 273-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
70
TÍTULO: Electrical study of impurity states in conjugated polymers  Full Text
AUTORES: Stallinga, P ; Gomes, HL ; Jones, GW; Taylor, DM;
PUBLICAÇÃO: 1999, FONTE: International Conference on Science and Technology of Synthetic Metals (ICSM 98) in SYNTHETIC METALS, VOLUME: 101, NÚMERO: 1-3
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
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