61
TÍTULO: Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering  Full Text
AUTORES: Barquinha, P ; Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on New Materials in Future Silicon Technology Held at the E-MAR 2004 Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 7, NÚMERO: 4-6
INDEXADO EM: Scopus WOS CrossRef
62
TÍTULO: MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge
AUTORES: Aguas, H ; Pereira, L ; Raniero, L; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXADO EM: Scopus WOS
63
TÍTULO: New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering  Full Text
AUTORES: Fortunato, E ; Goncalves, A; Marques, A; Viana, A ; Aguas, H ; Pereira, L ; Ferreira, I ; Vilarinho, P ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Protective Coatings and Thin Films held at the E-MRS 20th Spring Meeting in SURFACE & COATINGS TECHNOLOGY, VOLUME: 180
INDEXADO EM: Scopus WOS CrossRef: 51
64
TÍTULO: Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application  Full Text
AUTORES: Pereira, L ; Marques, A; Aguas, H ; Nedev, N; Georgiev, S; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Functional Metal Oxides - Semiconductor Structures held at the E-MRS 2003 Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 109, NÚMERO: 1-3
INDEXADO EM: Scopus WOS CrossRef
65
TÍTULO: Polycrystalline silicon obtained by gold metal induced crystallization  Full Text
AUTORES: Pereira, L ; Aguas, H ; Martins, RM ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
INDEXADO EM: Scopus WOS CrossRef
66
TÍTULO: Polycrystalline silicon obtained by metal induced crystallization using different metals  Full Text
AUTORES: Pereira, L ; Aguas, H ; Martins, RMS; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Thin Film and Nano-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXADO EM: Scopus WOS CrossRef: 28
67
TÍTULO: Properties of a-Si : H intrinsic films produced by HWPA-CVD technique  Full Text
AUTORES: Ferreira, I ; Aguas, H ; Pereira, L ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Thin Film and Nano-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451
INDEXADO EM: Scopus WOS
68
TÍTULO: Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition
AUTORES: Pereira, L ; Aguas, H ; Raniero, L; Martins, RMS ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
69
TÍTULO: Role of the rf frequency on the structure and composition of polymorphous silicon films  Full Text
AUTORES: Aguas, H ; Raniero, L; Pereira, L ; Viana, AS ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
INDEXADO EM: Scopus WOS
70
TÍTULO: Silicon etching in CF(4)/O(2) and SF(6) atmospheres
AUTORES: Silva, A; Raniero, L; Ferreira, E; Aguas, H ; Pereira, L ; Fortunato, E ; Martins, R;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXADO EM: Scopus WOS
Página 7 de 13. Total de resultados: 130.