Manfred Niehus
AuthID: R-000-9ZP
11
TÃTULO: New results on diffusion lengths measurements in wide bandgap semiconductors, obtained from steady state photocarrier gratings (SSPG) Full Text
AUTORES: Niehus, M; Schwarz, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6
AUTORES: Niehus, M; Schwarz, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6
12
TÃTULO: Thermalization and recombination in exponential band tail states Full Text
AUTORES: Niehus, M; Schwarz, R ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, NÚMERO: 6
AUTORES: Niehus, M; Schwarz, R ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, NÚMERO: 6
13
TÃTULO: Diffusion lengths in GaN obtained from steady state photocarrier gratings (SSPG) Full Text
AUTORES: Niehus, M; Schwarz, R ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, NÚMERO: 6
AUTORES: Niehus, M; Schwarz, R ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, NÚMERO: 6
14
TÃTULO: Structural and composition analysis of GaN films deposited by cyclic-PLD at different substrate temperatures Full Text
AUTORES: Sanguino, P; Teodoro, OMND ; Niehus, M; Marques, CP; Moutinho, AMC ; Alves, E ; Schwarz, R ;
PUBLICAÇÃO: 2005, FONTE: SENSORS AND ACTUATORS A-PHYSICAL, VOLUME: 121, NÚMERO: 1
AUTORES: Sanguino, P; Teodoro, OMND ; Niehus, M; Marques, CP; Moutinho, AMC ; Alves, E ; Schwarz, R ;
PUBLICAÇÃO: 2005, FONTE: SENSORS AND ACTUATORS A-PHYSICAL, VOLUME: 121, NÚMERO: 1
15
TÃTULO: Fine-tuning of the spectral collection efficiency in a multilayer junction through the LSP technique
AUTORES: Fernandes, M ; Fantoni, A ; Niehus, M; Louro, P ; Lavareda, G ; Carvalho, CN ; Vieira, M;
PUBLICAÇÃO: 2005, FONTE: Symposium on Micro- and Nanosystems held at the 2005 MRS Spring Meeting in Micro- and Nanosystems-Materials and Devices, VOLUME: 872
AUTORES: Fernandes, M ; Fantoni, A ; Niehus, M; Louro, P ; Lavareda, G ; Carvalho, CN ; Vieira, M;
PUBLICAÇÃO: 2005, FONTE: Symposium on Micro- and Nanosystems held at the 2005 MRS Spring Meeting in Micro- and Nanosystems-Materials and Devices, VOLUME: 872
INDEXADO EM: 
Scopus 
WOS
Scopus WOS16
TÃTULO: Spontaneous emission enhancement in micropatterned GaN Full Text
AUTORES: Niehus, M; Sanguino, P; Monteiro, T ; Soares, MJ ; Schwarz, R ;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
AUTORES: Niehus, M; Sanguino, P; Monteiro, T ; Soares, MJ ; Schwarz, R ;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
17
TÃTULO: Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses Full Text
AUTORES: Niehus, M; Sanguino, P; Schwarz, R ; Fedorov, A ; Martinho, JMG ; Soares, MJ ; Monteiro, T ; Wunsch, F; Kunst, M;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
AUTORES: Niehus, M; Sanguino, P; Schwarz, R ; Fedorov, A ; Martinho, JMG ; Soares, MJ ; Monteiro, T ; Wunsch, F; Kunst, M;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
18
TÃTULO: Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN Full Text
AUTORES: Sanguino, P; Niehus, M; Melo, L ; Schwarz, R ; Fedorov, A ; Martinho, JMG ; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTORES: Sanguino, P; Niehus, M; Melo, L ; Schwarz, R ; Fedorov, A ; Martinho, JMG ; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
19
TÃTULO: Lifetime regime in the electrically-detected transient grating method applied to amorphous and microcrystalline silicon films
AUTORES: Sanguino, P; Niehus, M; Koynov, S; Brogueira, P ; Schwarz, R ; Conde, JP ; Chu, V ; Schiff, EA;
PUBLICAÇÃO: 2002, FONTE: Symposium on Amorphous and Heterogeneous Silicon-Based Films held at the 2002 MRS Spring Meeting in AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, VOLUME: 715
AUTORES: Sanguino, P; Niehus, M; Koynov, S; Brogueira, P ; Schwarz, R ; Conde, JP ; Chu, V ; Schiff, EA;
PUBLICAÇÃO: 2002, FONTE: Symposium on Amorphous and Heterogeneous Silicon-Based Films held at the 2002 MRS Spring Meeting in AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, VOLUME: 715
INDEXADO EM: Scopus WOS
Scopus WOS20
TÃTULO: Layer by layer growth of GaN films by low temperature cyclic process
AUTORES: Sanguino, P; Koynov, S; Niehusl, M; Melo, LV ; Schwarz, R ; Alves, H; Meyer, BK;
PUBLICAÇÃO: 2002, FONTE: Symposium on GaN and Related Alloys-2001 held at the 2001 MRS Fall Meeting in GAN AND RELATED ALLOYS-2001, VOLUME: 693
AUTORES: Sanguino, P; Koynov, S; Niehusl, M; Melo, LV ; Schwarz, R ; Alves, H; Meyer, BK;
PUBLICAÇÃO: 2002, FONTE: Symposium on GaN and Related Alloys-2001 held at the 2001 MRS Fall Meeting in GAN AND RELATED ALLOYS-2001, VOLUME: 693
INDEXADO EM: Scopus WOS
Scopus WOS