Maria Helena Vaz de Carvalho Nazaré
AuthID: R-000-BMP
11
TÃTULO: OXYGEN COMPLEXING WITH GROUP-II IMPURITIES IN SILICON Full Text
AUTORES: DALY, SE; CAMPION, JD; MCGLYNN, E; HENRY, MO; DOCARMO, MC; NAZARE, MH;
PUBLICAÇÃO: 1995, FONTE: SOLID STATE COMMUNICATIONS, VOLUME: 93, NÚMERO: 5
AUTORES: DALY, SE; CAMPION, JD; MCGLYNN, E; HENRY, MO; DOCARMO, MC; NAZARE, MH;
PUBLICAÇÃO: 1995, FONTE: SOLID STATE COMMUNICATIONS, VOLUME: 93, NÚMERO: 5
INDEXADO EM: 
WOS
WOS12
TÃTULO: Nickel and nitrogen(?) related defects in high pressure synthetic diamond
AUTORES: Nazare, MH; Rino, LM; Kanda, H;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-, NÚMERO: pt 1
AUTORES: Nazare, MH; Rino, LM; Kanda, H;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-, NÚMERO: pt 1
INDEXADO EM: 
Scopus WOS
Scopus WOS13
TÃTULO: Photoreflectance, reflectivity and photoluminescence of MOVPE grown ZnSe/GaAs epilayers and ZnSeS/ZnSe superlattices
AUTORES: Boemare, C; Nazare, MH; Taudt, W; Sollner, J; Heuken, M;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-, NÚMERO: pt 1
AUTORES: Boemare, C; Nazare, MH; Taudt, W; Sollner, J; Heuken, M;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-, NÚMERO: pt 1
INDEXADO EM: Scopus WOS
Scopus WOS14
TÃTULO: Oxygen complexing with group II impurities in silicon
AUTORES: Daly, SE; McGlynn, E; Henry, MO; Campion, JD; McGuigan, KG; DoCarmo, MC; Nazare, MH;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-
AUTORES: Daly, SE; McGlynn, E; Henry, MO; Campion, JD; McGuigan, KG; DoCarmo, MC; Nazare, MH;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-
INDEXADO EM: WOS
WOS15
TÃTULO: Optical detection of magnetic resonance of nitrogen and nickel in high-pressure synthetic diamond
AUTORES: Nazare, MH; Mason, PW; Watkins, GD; Kanda, H;
PUBLICAÇÃO: 1995, FONTE: Phys. Rev. B - Physical Review B, VOLUME: 51, NÚMERO: 23
AUTORES: Nazare, MH; Mason, PW; Watkins, GD; Kanda, H;
PUBLICAÇÃO: 1995, FONTE: Phys. Rev. B - Physical Review B, VOLUME: 51, NÚMERO: 23
INDEXADO EM: 
CrossRef
CrossRef16
TÃTULO: A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON
AUTORES: HENRY, MO; CAMPION, JD; MCGUIGAN, KG; LIGHTOWLERS, EC; DOCARMO, MC; NAZARE, MH;
PUBLICAÇÃO: 1994, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 9, NÚMERO: 7
AUTORES: HENRY, MO; CAMPION, JD; MCGUIGAN, KG; LIGHTOWLERS, EC; DOCARMO, MC; NAZARE, MH;
PUBLICAÇÃO: 1994, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 9, NÚMERO: 7
INDEXADO EM: WOS
WOS17
TÃTULO: NICKEL RELATED ABSORPTION LINES IN HIGH-PRESSURE SYNTHETIC DIAMOND
AUTORES: NAZARE, MH; LOPES, JC; KANDA, H;
PUBLICAÇÃO: 1994, FONTE: 1994 MRS Spring Meeting on Diamond, SiC and Nitride Wide Bandgap Semiconductors in DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS, VOLUME: 339
AUTORES: NAZARE, MH; LOPES, JC; KANDA, H;
PUBLICAÇÃO: 1994, FONTE: 1994 MRS Spring Meeting on Diamond, SiC and Nitride Wide Bandgap Semiconductors in DIAMOND, SIC AND NITRIDE WIDE BANDGAP SEMICONDUCTORS, VOLUME: 339
INDEXADO EM: Scopus WOS
Scopus WOS18
TÃTULO: PHOTOLUMINESCENCE STUDIES OF SI1-XGEX/SI HETEROSTRUCTURES GROWN BY LPCVD
AUTORES: NAZARE, MH; DUARTE, AJL; SCHMIDT, G; HEIME, K;
PUBLICAÇÃO: 1994, FONTE: Symposium on Growth, Processing, and Characterization of Semiconductor Heterostructures, at the 1993 Fall Meeting of the Materials-Research-Society in GROWTH, PROCESSING, AND CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES, VOLUME: 326
AUTORES: NAZARE, MH; DUARTE, AJL; SCHMIDT, G; HEIME, K;
PUBLICAÇÃO: 1994, FONTE: Symposium on Growth, Processing, and Characterization of Semiconductor Heterostructures, at the 1993 Fall Meeting of the Materials-Research-Society in GROWTH, PROCESSING, AND CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES, VOLUME: 326
INDEXADO EM: Scopus WOS
Scopus WOS19
TÃTULO: CORRELATION OF PHOTOLUMINESCENCE AND NUCLEAR CHARACTERIZATION OF IN-IMPLANTED SILICON Full Text
AUTORES: HENRY, MO; KEHOE, TB; NAZARE, MH; FREITAG, K; VIANDEN, R;
PUBLICAÇÃO: 1993, FONTE: SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN MATERIALS RESEARCH SOC in APPLIED SURFACE SCIENCE, VOLUME: 63, NÚMERO: 1-4
AUTORES: HENRY, MO; KEHOE, TB; NAZARE, MH; FREITAG, K; VIANDEN, R;
PUBLICAÇÃO: 1993, FONTE: SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN MATERIALS RESEARCH SOC in APPLIED SURFACE SCIENCE, VOLUME: 63, NÚMERO: 1-4
INDEXADO EM: Scopus WOS
Scopus WOS20
TÃTULO: OPTICAL-TRANSITIONS ON CDS CDTE CVD HETEROSTRUCTURES
AUTORES: BOEMARE, C; NAZARE, MH;
PUBLICAÇÃO: 1992, FONTE: SYMP ON WIDE BAND GAP SEMICONDUCTORS, AT THE 1991 FALL MEETING OF THE MATERIALS RESEARCH SOC in WIDE BAND GAP SEMICONDUCTORS, VOLUME: 242
AUTORES: BOEMARE, C; NAZARE, MH;
PUBLICAÇÃO: 1992, FONTE: SYMP ON WIDE BAND GAP SEMICONDUCTORS, AT THE 1991 FALL MEETING OF THE MATERIALS RESEARCH SOC in WIDE BAND GAP SEMICONDUCTORS, VOLUME: 242
INDEXADO EM: WOS
WOS