Rodrigo Ferrao Paiva Martins
AuthID: R-000-FKV
301
TITLE: Erratum: “Thin-film transistors based on p-type Cu[sub 2]O thin films produced at room temperature” [Appl. Phys. Lett. 96, 192102 (2010)] Full Text
AUTHORS: Elvira Fortunato; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins;
PUBLISHED: 2010, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 96, ISSUE: 23
AUTHORS: Elvira Fortunato; Vitor Figueiredo; Pedro Barquinha; Elangovan Elamurugu; Raquel Barros; Gonçalo Gonçalves; Sang-Hee Ko Park; Chi-Sun Hwang; Rodrigo Martins;
PUBLISHED: 2010, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 96, ISSUE: 23
302
TITLE: <title>Floating gate memory paper transistor</title>
AUTHORS: Martins, R; Pereira, L; Barquinha, P; Correia, N; Gonçalves, G; Ferreira, I; Dias, C; Fortunato, E;
PUBLISHED: 2010, SOURCE: Oxide-based Materials and Devices
AUTHORS: Martins, R; Pereira, L; Barquinha, P; Correia, N; Gonçalves, G; Ferreira, I; Dias, C; Fortunato, E;
PUBLISHED: 2010, SOURCE: Oxide-based Materials and Devices
303
TITLE: High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L; Franco, N; Alves, E; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
AUTHORS: Gonçalves, G; Barquinha, P; Pereira, L; Franco, N; Alves, E; Martins, R; Fortunato, E;
PUBLISHED: 2010, SOURCE: Electrochemical and Solid-State Letters - Electrochem. Solid-State Lett., VOLUME: 13, ISSUE: 1
304
TITLE: Role of Trimethylboron to Silane Ratio on the Properties of <I>p</I>-Type Nanocrystalline Silicon Thin Film Deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition
AUTHORS: Águas, H; Filonovich, SA; Bernacka-Wojcik, I; Fortunato, E; Martins, R;
PUBLISHED: 2010, SOURCE: Journal of Nanoscience and Nanotechnology - J. Nanosci. Nanotech., VOLUME: 10, ISSUE: 4
AUTHORS: Águas, H; Filonovich, SA; Bernacka-Wojcik, I; Fortunato, E; Martins, R;
PUBLISHED: 2010, SOURCE: Journal of Nanoscience and Nanotechnology - J. Nanosci. Nanotech., VOLUME: 10, ISSUE: 4
305
TITLE: Room-Temperature Cosputtered HfO2-Al2O3 Multicomponent Gate Dielectrics
AUTHORS: Pei, ZL; Pereira, L ; Goncalves, G; Barquinha, P; Franco, N; Alves, E ; Rego, AMB ; Martins, R; Fortunato, E ;
PUBLISHED: 2009, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 12, ISSUE: 10
AUTHORS: Pei, ZL; Pereira, L ; Goncalves, G; Barquinha, P; Franco, N; Alves, E ; Rego, AMB ; Martins, R; Fortunato, E ;
PUBLISHED: 2009, SOURCE: ELECTROCHEMICAL AND SOLID STATE LETTERS, VOLUME: 12, ISSUE: 10
IN MY: 
ORCID | 
ResearcherID
ORCID | ResearcherID306
TITLE: Preface Full Text
AUTHORS: Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Phys. Status Solidi (a) - physica status solidi (a), VOLUME: 206, ISSUE: 9
AUTHORS: Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Phys. Status Solidi (a) - physica status solidi (a), VOLUME: 206, ISSUE: 9
307
TITLE: <title>Paper field effect transistor</title>
AUTHORS: Fortunato, E; Nuno Correia; Pedro Barquinha; Cláudia Costa; Luís Pereira; Gonçalo Gonçalves; Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
AUTHORS: Fortunato, E; Nuno Correia; Pedro Barquinha; Cláudia Costa; Luís Pereira; Gonçalo Gonçalves; Rodrigo Martins;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
308
TITLE: <title>Zinc oxide and related compounds: order within the disorder</title>
AUTHORS: Martins, R; Luisa Pereira; Barquinha, P; Ferreira, I; Prabakaran, R; Goncalves, G; Goncalves, A; Fortunato, E;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
AUTHORS: Martins, R; Luisa Pereira; Barquinha, P; Ferreira, I; Prabakaran, R; Goncalves, G; Goncalves, A; Fortunato, E;
PUBLISHED: 2009, SOURCE: Zinc Oxide Materials and Devices IV
309
TITLE: Evidence of cold bubble-like structure in START density limit plasmas Full Text
AUTHORS: Ribeiro, C; Jenkins, I; Martin, R; Sykes, A; Walsh, MJ;
PUBLISHED: 2008, SOURCE: PLASMA PHYSICS REPORTS, VOLUME: 34, ISSUE: 9
AUTHORS: Ribeiro, C; Jenkins, I; Martin, R; Sykes, A; Walsh, MJ;
PUBLISHED: 2008, SOURCE: PLASMA PHYSICS REPORTS, VOLUME: 34, ISSUE: 9
310
TITLE: Relaxation of compressively strained AlInN on GaN Full Text
AUTHORS: Lorenz, K ; Franco, N; Alves, E ; Pereira, S ; Watson, IM; Martin, RW; O'Donnell, KP;
PUBLISHED: 2008, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 310, ISSUE: 18
AUTHORS: Lorenz, K ; Franco, N; Alves, E ; Pereira, S ; Watson, IM; Martin, RW; O'Donnell, KP;
PUBLISHED: 2008, SOURCE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 310, ISSUE: 18
