Shibin Zhang
AuthID: R-000-GGQ
11
TÃTULO: Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique. Full Text
AUTORES: Raniero, L; Ferreira, I ; Aguas, H ; Zhang, S; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: 31st IEEE Photovoltaic Specialists Conference in Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005
AUTORES: Raniero, L; Ferreira, I ; Aguas, H ; Zhang, S; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: 31st IEEE Photovoltaic Specialists Conference in Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005
12
TÃTULO: The diphasic nc-Si/a-Si : H thin film with improved medium-range order Full Text
AUTORES: Zhang, S; Liao, X; Xu, Y; Martins, R ; Fortunato, E ; Kong, G;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
AUTORES: Zhang, S; Liao, X; Xu, Y; Martins, R ; Fortunato, E ; Kong, G;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
13
TÃTULO: Characterization of silicon carbide thin films prepared by VHF-PECVD technology Full Text
AUTORES: Zhang, S; Raniero, L; Fortunato, E ; Pereira, L ; Martins, N; Canhola, P; Ferreira, I ; Nedev, N; Aguas, H ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
AUTORES: Zhang, S; Raniero, L; Fortunato, E ; Pereira, L ; Martins, N; Canhola, P; Ferreira, I ; Nedev, N; Aguas, H ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
