Ulrich Wahl
AuthID: R-000-HB1
71
TÃTULO: alpha-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals Full Text
AUTORES: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLICAÇÃO: 1995, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, NÚMERO: 1-4
AUTORES: DeWachter, J; Blasser, S; Hofsass, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; VanDuppen, P; Langouche, G;
PUBLICAÇÃO: 1995, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, NÚMERO: 1-4
INDEXADO EM: 
Scopus 
WOS
Scopus WOS NO MEU: 
ORCID | ResearcherID
ORCID | ResearcherID72
TÃTULO: Lattice sites of ion implanted Li in Zn-rich ZnSe
AUTORES: Jahn, SG; Wahl, U; Restle, M; Quintel, H; Hofsass, H; Wienecke, M; Trojahn, I;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-2, NÚMERO: pt 1
AUTORES: Jahn, SG; Wahl, U; Restle, M; Quintel, H; Hofsass, H; Wienecke, M; Trojahn, I;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-2, NÚMERO: pt 1
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID73
TÃTULO: Lattice sites of Li in Si and Ge
AUTORES: Wahl, U; Jahn, SG; Restle, M; Quintel, H; Hofsass, H;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-2, NÚMERO: pt 1
AUTORES: Wahl, U; Jahn, SG; Restle, M; Quintel, H; Hofsass, H;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-2, NÚMERO: pt 1
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID74
TÃTULO: Lattice site changes of ion implanted Li in ZnSe Full Text
AUTORES: S.G Jahn; Hofsäss, H; Restle, M; Ronning, C; Trojahn, I; Wahl, U; Wienecke, M;
PUBLICAÇÃO: 1995, FONTE: Solid State Communications, VOLUME: 93, NÚMERO: 5
AUTORES: S.G Jahn; Hofsäss, H; Restle, M; Ronning, C; Trojahn, I; Wahl, U; Wienecke, M;
PUBLICAÇÃO: 1995, FONTE: Solid State Communications, VOLUME: 93, NÚMERO: 5
75
TÃTULO: α-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals Full Text
AUTORES: De Wachter, J; Blässer, S; Hofsäss, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; Van Duppen, P; Langouche, G;
PUBLICAÇÃO: 1995, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 106, NÚMERO: 1-4
AUTORES: De Wachter, J; Blässer, S; Hofsäss, H; Jahn, S; Lindroos, M; Moons, R; Pattyn, H; Restle, M; Vantomme, A; Wahl, U; Van Duppen, P; Langouche, G;
PUBLICAÇÃO: 1995, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 106, NÚMERO: 1-4
76
TÃTULO: Lattice sites of ion implanted Li in diamond Full Text
AUTORES: Restle, M; Bharuth-Ram, K; Quintel, H; Ronning, C; Hofsäss, H; Jahn, SG; ISOLDE-Collaboration, ; Wahl, U;
PUBLICAÇÃO: 1995, FONTE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 66, NÚMERO: 20
AUTORES: Restle, M; Bharuth-Ram, K; Quintel, H; Ronning, C; Hofsäss, H; Jahn, SG; ISOLDE-Collaboration, ; Wahl, U;
PUBLICAÇÃO: 1995, FONTE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 66, NÚMERO: 20
77
TÃTULO: IMPURITY LATTICE LOCATION AND RECOVERY OF STRUCTURAL DEFECTS IN SEMICONDUCTORS STUDIED BY EMISSION CHANNELING
AUTORES: HOFSAS, H; WAHL, U; JAHN, SG;
PUBLICAÇÃO: 1994, FONTE: HYPERFINE INTERACTIONS, VOLUME: 84, NÚMERO: 1-4
AUTORES: HOFSAS, H; WAHL, U; JAHN, SG;
PUBLICAÇÃO: 1994, FONTE: HYPERFINE INTERACTIONS, VOLUME: 84, NÚMERO: 1-4
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID78
TÃTULO: LI ON BOND-CENTER SITES IN SI
AUTORES: Wahl, U; Restle, M; Ronning, C; Hofsass, H; Jahn, SG;
PUBLICAÇÃO: 1994, FONTE: PHYSICAL REVIEW B, VOLUME: 50, NÚMERO: 4
AUTORES: Wahl, U; Restle, M; Ronning, C; Hofsass, H; Jahn, SG;
PUBLICAÇÃO: 1994, FONTE: PHYSICAL REVIEW B, VOLUME: 50, NÚMERO: 4
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID79
TÃTULO: LATTICE SITES OF ION-IMPLANTED LI IN INDIUM-ANTIMONIDE Full Text
AUTORES: HOFSASS, H; WAHL, U; RESTLE, M; RONNING, C; RECKNAGEL, E; JAHN, SG;
PUBLICAÇÃO: 1994, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 85, NÚMERO: 1-4
AUTORES: HOFSASS, H; WAHL, U; RESTLE, M; RONNING, C; RECKNAGEL, E; JAHN, SG;
PUBLICAÇÃO: 1994, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 85, NÚMERO: 1-4
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID80
TÃTULO: Impurity lattice location and recovery of structural defects in semiconductors studied by emission channeling
AUTORES: Hofsäss, H; Wahl, U; Jahn, SG;
PUBLICAÇÃO: 1994, FONTE: Hyperfine Interact - Hyperfine Interactions, VOLUME: 84, NÚMERO: 1
AUTORES: Hofsäss, H; Wahl, U; Jahn, SG;
PUBLICAÇÃO: 1994, FONTE: Hyperfine Interact - Hyperfine Interactions, VOLUME: 84, NÚMERO: 1
