131
TITLE: Absolute scale reciprocal space mapping on X-ray diffractometers incorporating a position sensitive detector: Application to III-nitride semiconductors
AUTHORS: Franco, N; Pereira, S ; Sequeira, AD;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
IN MY: ORCID
132
TITLE: Structural characterization and luminescence of Ge/Si quantum dots
AUTHORS: Fonseca, A; Sobolev, NA; Leitao, JP ; Carmo, MC; Franco, N; Presting, H; Sequeira, AD;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS CrossRef: 1
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133
TITLE: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping (vol 80, pg 3913, 2002)  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 8
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134
TITLE: Characterisation of corrosion products in Cr implanted Mg surfaces  Full Text
AUTHORS: Vilarigues, M ; Alves, LC ; Nogueira, ID; Franco, N; Sequeira, AD; da Silva, RC;
PUBLISHED: 2002, SOURCE: 12th International Conference on Surface Modification of Materials by Ion Beams in SURFACE & COATINGS TECHNOLOGY, VOLUME: 158
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135
TITLE: Structural and optical properties of InGaN/GaN layers close to the critical layer thickness  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; Trager Cowan, C; Sweeney, F; O'Donnell, KP; Alves, E ; Franco, N; Sequeira, AD;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 81, ISSUE: 7
INDEXED IN: Scopus WOS CrossRef: 85
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136
TITLE: Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Martin, RW; White, ME; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Spring Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 93, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef: 12
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137
TITLE: Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N; Watson, IM; Deatcher, CJ;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 21
INDEXED IN: Scopus WOS CrossRef
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138
TITLE: Strain relaxation and compositional analysis of InGaN/GaN layers by Rutherford backscattering  Full Text
AUTHORS: Alves, E ; Pereira, S ; Correia, MR ; Pereira, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, ISSUE: 1-4
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139
TITLE: Application of high-resolution X-ray diffraction to study strain status in Si1-xGex/Si1-yGey/Si (001) heterostructures  Full Text
AUTHORS: Chtcherbatchev, KD; Sequeira, AD; Franco, N; Barradas, NP ; Myronov, M; Mironov, OA; Parker, EHC;
PUBLISHED: 2002, SOURCE: 9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 91
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140
TITLE: Interpretation of double x-ray diffraction peaks from InGaN layers (vol 79, pg 1432, 2001)  Full Text
AUTHORS: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 80, ISSUE: 2
INDEXED IN: Scopus WOS
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