Patrick R. Briddon
AuthID: R-006-MRG
31
TÃTULO: Ab-initio vibrational properties of SiGe alloys Full Text
AUTORES: Torres, VJB ; Coutinho, J ; Briddon, PR; Barroso, M ;
PUBLICAÇÃO: 2008, FONTE: THIN SOLID FILMS, VOLUME: 517, NÚMERO: 1
AUTORES: Torres, VJB ; Coutinho, J ; Briddon, PR; Barroso, M ;
PUBLICAÇÃO: 2008, FONTE: THIN SOLID FILMS, VOLUME: 517, NÚMERO: 1
32
TÃTULO: Ab initio investigation of phosphorus and boron diffusion in germanium Full Text
AUTORES: Janke, C; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Janke, C; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
33
TÃTULO: Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys Full Text
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Barroso, M ; Goss, JP; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Barroso, M ; Goss, JP; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
34
TÃTULO: Density-functional theory study of Au, Ag and Cu defects in germanium Full Text
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Silva, E; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Silva, E; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
35
TÃTULO: Complexes of self-interstitials with oxygen atoms in germanium Full Text
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, M; Markevich, VP; Murin, LI; Litvinov, VV; Carvalho, A; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, M; Markevich, VP; Murin, LI; Litvinov, VV; Carvalho, A; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
36
TÃTULO: First-principles study of Fe and FeAl defects in SiGe alloys
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Goss, J; Barroso, M ; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: PHYSICAL REVIEW B, VOLUME: 78, NÚMERO: 12
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Goss, J; Barroso, M ; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: PHYSICAL REVIEW B, VOLUME: 78, NÚMERO: 12
37
TÃTULO: Inducing energy gaps in monolayer and bilayer graphene: Local density approximation calculations
AUTORES: Ribeiro, RM ; Peres, NMR ; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: PHYSICAL REVIEW B, VOLUME: 78, NÚMERO: 7
AUTORES: Ribeiro, RM ; Peres, NMR ; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: PHYSICAL REVIEW B, VOLUME: 78, NÚMERO: 7
38
TÃTULO: Interstitial carbon-related defects in Si1-xGex alloys
AUTORES: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
AUTORES: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
INDEXADO EM: 
Scopus
Scopus39
TÃTULO: Interstitial carbon-related defects in Si1-xGex alloys
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB; Coutinho, J; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, VOLUME: 131-133
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB; Coutinho, J; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, VOLUME: 131-133
INDEXADO EM: 
WOS
WOS40
TÃTULO: Identification of stable and metastable forms of VO2 centers in germanium Full Text
AUTORES: Carvalho, A; Torres, VJB ; Markevich, VP; Coutinho, J ; Litvinov, VV; Peaker, AR; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
AUTORES: Carvalho, A; Torres, VJB ; Markevich, VP; Coutinho, J ; Litvinov, VV; Peaker, AR; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2007, FONTE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
