Patrick R. Briddon
AuthID: R-006-MRG
61
TÃTULO: Calculation of deep carrier traps in a divacancy in germanium crystals Full Text
AUTORES: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 88, NÚMERO: 9
AUTORES: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 88, NÚMERO: 9
62
TÃTULO: Local vibrations of substitutional carbon in SiGe alloys
AUTORES: Khirunenko, L; Pomozov, Y; Sosnin, M; Torres, VJB ; Coutinho, J ; Jones, R; Abrosimov, NV; Riemann, H; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1
AUTORES: Khirunenko, L; Pomozov, Y; Sosnin, M; Torres, VJB ; Coutinho, J ; Jones, R; Abrosimov, NV; Riemann, H; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1
INDEXADO EM: 
Scopus 
WOS
Scopus WOS63
TÃTULO: Electronic structure and Jahn-Teller instabilities in a single vacancy in Ge Full Text
AUTORES: Coutinho, J ; Jones, R; Torres, VJB ; Barroso, M ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 48
AUTORES: Coutinho, J ; Jones, R; Torres, VJB ; Barroso, M ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 48
64
TÃTULO: Local vibrations on hydrogen dimers in dilute SiGe crystalline solutions Full Text
AUTORES: Coutinho, J ; Torres, VJB ; Pereira, RN ; Jones, R; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
AUTORES: Coutinho, J ; Torres, VJB ; Pereira, RN ; Jones, R; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.
65
TÃTULO: Density-functional study of small interstitial clusters in Si: Comparison with experiments
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 72, NÚMERO: 15
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 72, NÚMERO: 15
66
TÃTULO: Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals
AUTORES: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Jones, R; Ohya, T; Itoh, KM; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 72, NÚMERO: 11
AUTORES: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Jones, R; Ohya, T; Itoh, KM; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 72, NÚMERO: 11
67
TÃTULO: Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys Full Text
AUTORES: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLICAÇÃO: 2005, FONTE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 22
AUTORES: Balsas, A ; Torres, VJB ; Coutinho, J ; Jones, R; Hourahine, B; Briddon, PR; Barroso, M ;
PUBLICAÇÃO: 2005, FONTE: 1st International Workshop on Coordination Action on Defects Relevent to Engineering Silicon-Based Devices in JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 22
INDEXADO EM: WOS
WOS68
TÃTULO: Electrical activity of Er and Er-O centers in silicon
AUTORES: Prezzi, D; Eberlein, TAG; Jones, R; Filhol, JS; Coutinho, J ; Shaw, MJ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 71, NÚMERO: 24
AUTORES: Prezzi, D; Eberlein, TAG; Jones, R; Filhol, JS; Coutinho, J ; Shaw, MJ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 71, NÚMERO: 24
69
TÃTULO: Ab initio calculation of the local vibrational modes of the interstitial boron-interstitial oxygen defect in Si Full Text
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 17
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 17
70
TÃTULO: Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
AUTORES: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTORES: Murin, LI; Lindstrom, J; Markevich, VP; Medvedeva, IF; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXADO EM: Scopus WOS
Scopus WOS