Patrick R. Briddon
AuthID: R-006-MRG
71
TÃTULO: Ab-initio studies of local vibrations of small self-interstitial aggregates in silicon
AUTORES: Carvalho, A; Jones, R; Coutinho, J; Torres, VJB; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 in Solid State Phenomena, VOLUME: 108-109
AUTORES: Carvalho, A; Jones, R; Coutinho, J; Torres, VJB; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 in Solid State Phenomena, VOLUME: 108-109
INDEXADO EM: 
Scopus
Scopus72
TÃTULO: Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys Full Text
AUTORES: Coutinho, J ; Balsas, A ; Torres, VJB ; Briddom, PR; Barroso, M ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 114, NÚMERO: SPEC. ISS.
AUTORES: Coutinho, J ; Balsas, A ; Torres, VJB ; Briddom, PR; Barroso, M ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 114, NÚMERO: SPEC. ISS.
73
TÃTULO: Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes
AUTORES: Balsas, A ; Coutinho, J ; Torres, VJB ; Briddon, PR; Barroso, M ;
PUBLICAÇÃO: 2004, FONTE: PHYSICAL REVIEW B, VOLUME: 70, NÚMERO: 8
AUTORES: Balsas, A ; Coutinho, J ; Torres, VJB ; Briddon, PR; Barroso, M ;
PUBLICAÇÃO: 2004, FONTE: PHYSICAL REVIEW B, VOLUME: 70, NÚMERO: 8
74
TÃTULO: Optically active erbium-oxygen complexes in GaAs Full Text
AUTORES: Coutinho, J ; Jones, R; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLICAÇÃO: 2004, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 84, NÚMERO: 10
AUTORES: Coutinho, J ; Jones, R; Shaw, MJ; Briddon, PR; Oberg, S;
PUBLICAÇÃO: 2004, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 84, NÚMERO: 10
75
TÃTULO: Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys
AUTORES: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLICAÇÃO: 2004, FONTE: PHYSICAL REVIEW B, VOLUME: 69, NÚMERO: 12
AUTORES: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLICAÇÃO: 2004, FONTE: PHYSICAL REVIEW B, VOLUME: 69, NÚMERO: 12
76
TÃTULO: Ab initio modeling of N-H, P-H and As-H defects in ZnSe Full Text
AUTORES: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTORES: Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
77
TÃTULO: The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si Full Text
AUTORES: Coutinho, J ; Jones, R; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTORES: Coutinho, J ; Jones, R; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
78
TÃTULO: Interaction between oxygen and single self-interstitials in silicon Full Text
AUTORES: Pinho, N; Coutinho, J ; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTORES: Pinho, N; Coutinho, J ; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
79
TÃTULO: Ab initio modeling of Be-H and Zn-H complexes in Si Full Text
AUTORES: Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTORES: Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
80
TÃTULO: Electronic properties of vacancy-oxygen complexes in SiGe alloys Full Text
AUTORES: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTORES: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
