The Formation, Dissociation and Electrical Activity of Divacancy-Oxygen Complexes in Si

AuthID
 P-000-E1S
4
Author(s)
Oberg, S
·
1
Editor(es)
Bonde Nielsen K.Nylandsted Larsen A.Weyer G.
Tipo de Documento
Article
Year published
2003
Publicado
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 340, Páginas: 523-527 (5)
Conference
22Nd International Conference on Defects in Semiconductors (Icds-22), Date: JUL 28-AUG 01, 2003, Location: AARHUS, DENMARK, Host: UNIV AARHUS
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Publication Identifiers
SCOPUS: 2-s2.0-0347134677
Wos: WOS:000188300200106
Source Identifiers
ISSN: 0921-4526
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