11
TÍTULO: Comparative study of radiation damage in GaN and InGaN by 400 keV Au implantation  Full Text
AUTORES: Wendler, E; Wesch, W; Alves, E ; Kamarou, A;
PUBLICAÇÃO: 2004, FONTE: 12th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 218, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
12
TÍTULO: Three-step amorphisation process in ion-implanted GaN at 15 K  Full Text
AUTORES: Wendler, E; Kamarou, A; Alves, E ; Gartner, K; Wesch, W;
PUBLICAÇÃO: 2003, FONTE: 13th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 206
INDEXADO EM: Scopus WOS CrossRef
13
TÍTULO: Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool  Full Text
AUTORES: Jeynes, C; Barradas, NP ; Marriott, PK; Boudreault, G; Jenkin, M; Wendler, E; Webb, RP;
PUBLICAÇÃO: 2003, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, NÚMERO: 7
INDEXADO EM: Scopus WOS CrossRef
14
TÍTULO: Accurate determination of the stopping power of He-4 in Si using Bayesian inference  Full Text
AUTORES: Barradas, NP ; Jeynes, C; Webb, RP; Wendler, E;
PUBLICAÇÃO: 2002, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 194, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef
15
TÍTULO: Applying elastic backscattering spectrometry when the nuclear excitation function has a fine structure  Full Text
AUTORES: Gurbich, AF; Barradas, NP ; Jeynes, C; Wendler, E;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
16
TÍTULO: Determination of stopping power of ions in matter
AUTORES: Barradas, NP ; Jeynes, C; Webb, RP; Wendler, E;
PUBLICAÇÃO: 2001, FONTE: International Conference on Advanced Monte Carlo for Radiation Physics, Particle Transport Simulation and Applications in ADVANCED MONTE CARLO FOR RADIATION PHYSICS, PARTICLE TRANSPORT SIMULATION AND APPLICATIONS
INDEXADO EM: WOS
17
TÍTULO: Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling  Full Text
AUTORES: Nejim, A; Barradas, NP ; Jeynes, C; Cristiano, F; Wendler, E; Gartner, K; Sealy, BJ;
PUBLICAÇÃO: 1998, FONTE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
Página 2 de 2. Total de resultados: 17.