V. N. Mordkovich
AuthID: R-007-0X5
1
TÃTULO: Radiation-induced structural transformations in a silicon layer of SOI Full Text
AUTORES: Shcherbachev, KD; Bublik, VT; Mordkovich, VN; Pazhin, DM; Alves, E ; Barradas, NP ;
PUBLICAÇÃO: 2007, FONTE: 8th Biennial Conference on High Resolution X-Ray Diffraction and Imaging in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 204, NÚMERO: 8
AUTORES: Shcherbachev, KD; Bublik, VT; Mordkovich, VN; Pazhin, DM; Alves, E ; Barradas, NP ;
PUBLICAÇÃO: 2007, FONTE: 8th Biennial Conference on High Resolution X-Ray Diffraction and Imaging in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 204, NÚMERO: 8
2
TÃTULO: The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy Full Text
AUTORES: Chtcherbatchev, KD; Bublik, VT; Markevich, AS; Mordkovich, VN; Alves, E ; Barradas, NP ; Sequeira, AD;
PUBLICAÇÃO: 2003, FONTE: X-TOP 2002 Conference in JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, NÚMERO: 10A
AUTORES: Chtcherbatchev, KD; Bublik, VT; Markevich, AS; Mordkovich, VN; Alves, E ; Barradas, NP ; Sequeira, AD;
PUBLICAÇÃO: 2003, FONTE: X-TOP 2002 Conference in JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 36, NÚMERO: 10A
