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TÍTULO: Large area deposition of polymorphous silicon by plasma enhanced chemical vapor deposition at 27.12 MHz and 13.56 MHz
AUTORES: Aguas, H ; Silva, V; Fortunato, E ; Lebib, S; Cabarrocas, PRI; Ferreira, I ; Guimaraes, L; Martins, R ;
PUBLICAÇÃO: 2003, FONTE: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, VOLUME: 42, NÚMERO: 8
INDEXADO EM: Scopus WOS