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TITLE: A comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
AUTHORS: Vacas, J; Lahreche, H; Monteiro, T ; Gaspar, C; Pereira, E; Brylinski, C; di Forte Poisson, MA;
PUBLISHED: 2000, SOURCE: International Conference on Silicon Carbide and Related Materials in SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, VOLUME: 338-3
INDEXED IN: Scopus WOS