ProfileOfResearchers

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TÃTULO: Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
AUTORES: Nerijus Armakavicius; Sean Knight; Philipp Kühne; Vallery Stanishev; Dat Q Tran; Steffen Richter; Alexis Papamichail; Megan Stokey; Preston Sorensen; Ufuk Kilic; Mathias Schubert; Plamen P Paskov; Vanya Darakchieva;
PUBLICAÇÃO: 2024, FONTE: APL Materials, VOLUME: 12, NÚMERO: 2

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TÃTULO: High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
AUTORES: Gogova, D; Tran, DQ; Stanishev, V; Jokubavicius, V; Vines, L; Schubert, M; Yakimova, R; Paskov, PP; Darakchieva, V;
PUBLICAÇÃO: 2024, FONTE: Journal of Vacuum Science & Technology A, VOLUME: 42, NÚMERO: 2

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TÃTULO: Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
AUTORES: Nerijus Armakavicius; Philipp Kühne; Alexis Papamichail; Hengfang Zhang; Sean Knight; Axel Persson; Vallery Stanishev; Jr-Tai Chen; Plamen Paskov; Mathias Schubert; Vanya Darakchieva;
PUBLICAÇÃO: 2024, FONTE: Materials, VOLUME: 17, NÚMERO: 13

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TÃTULO: Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
AUTORES: Papamichail, A; Persson, AR; Richter, S; Stanishev, V; Armakavicius, N; Kühne, P; Guo, S; Persson, POÅ; Paskov, PP; Rorsman, N; Darakchieva, V;
PUBLICAÇÃO: 2024, FONTE: Applied Physics Letters, VOLUME: 125, NÚMERO: 12

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TÃTULO: Effective uniaxial dielectric function tensor and optical phonons in ( <math><mrow><mover><mn>2</mn><mo>¯</mo></mover></mrow><mn>01</mn></math> )-oriented <math><mi>β</mi></math> - <math><msub><mi>Ga</mi><mn>2</mn></msub><msub><mrow><mi>O</mi></mrow><mn>3</mn></msub></math> films with equally distributed sixfold-rotation domains
AUTORES: Alyssa Mock; Steffen Richter; Alexis Papamichail; Vallery Stanishev; Misagh Ghezellou; Jawad Ul-Hassan; Andreas Popp; Saud Bin Anooz; Daniela Gogova; Praneeth Ranga; Sriram Krishnamoorthy; Rafal Korlacki; Mathias Schubert; Vanya Darakchieva;
PUBLICAÇÃO: 2024, FONTE: Physical Review Applied, VOLUME: 22, NÚMERO: 4

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TÃTULO: Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
AUTORES: Papamichail, A; Persson, AR; Richter, S; Kühne, P; Stanishev, V; Persson, POÅ; Ferrand-Drake Del Castillo, R; Thorsell, M; Hjelmgren, H; Paskov, PP; Rorsman, N; Darakchieva, V;
PUBLICAÇÃO: 2023, FONTE: Applied Physics Letters, VOLUME: 122, NÚMERO: 15

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TÃTULO: Low Al-content n-type Al<math><msub><mrow></mrow><mrow><mi>x</mi></mrow></msub></math>Ga<math><msub><mrow></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></math>N layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
AUTORES: Vallery Stanishev; Nerijus Armakavicius; Daniela Gogova; Muhammad Nawaz; Niklas Rorsman; Plamen P Paskov; Vanya Darakchieva;
PUBLICAÇÃO: 2023, FONTE: Vacuum, VOLUME: 217

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TÃTULO: Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
AUTORES: Sean Knight; Steffen Richter; Alexis Papamichail; Philipp Kühne; Nerijus Armakavicius; Shiqi Guo; Axel R Persson; Vallery Stanishev; Viktor Rindert; Per O Å Persson; Plamen P Paskov; Mathias Schubert; Vanya Darakchieva;
PUBLICAÇÃO: 2023, FONTE: Journal of Applied Physics, VOLUME: 134, NÚMERO: 18

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TÃTULO: Switchable Broadband Terahertz Absorbers Based on Conducting Polymer‐Cellulose Aerogels
AUTORES: Chaoyang Kuang; Shangzhi Chen; Min Luo; Qilun Zhang; Xiao Sun; Shaobo Han; Qingqing Wang; Vallery Stanishev; Vanya Darakchieva; Reverant Crispin; Mats Fahlman; Dan Zhao; Qiye Wen; Magnus P Jonsson;
PUBLICAÇÃO: 2023, FONTE: Advanced Science, VOLUME: 11, NÚMERO: 3

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CrossRef: 5

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