Robert Francis Jones
AuthID: R-001-FHB
1
TÃTULO: Efficacy and safety outcomes of darolutamide in patients with nonmetastatic castration-resistant prostate cancer with comorbidities and concomitant medications from ARAMIS.
AUTORES: Fizazi, Karim; Shore, Neal D.; Smith, Matthew Raymond; Ramos, Rodrigo; Jones, Robert J.; Niegisch, Guenter; Vjaters, Egils; Ortiz, Jorge A.; Liang, Steve; Wang, Yuan; Srinivasan, Shankar; Sarapohja, Toni; Verholen, Frank;
PUBLICAÇÃO: 2022, FONTE: JOURNAL OF CLINICAL ONCOLOGY, VOLUME: 40, NÚMERO: 6
AUTORES: Fizazi, Karim; Shore, Neal D.; Smith, Matthew Raymond; Ramos, Rodrigo; Jones, Robert J.; Niegisch, Guenter; Vjaters, Egils; Ortiz, Jorge A.; Liang, Steve; Wang, Yuan; Srinivasan, Shankar; Sarapohja, Toni; Verholen, Frank;
PUBLICAÇÃO: 2022, FONTE: JOURNAL OF CLINICAL ONCOLOGY, VOLUME: 40, NÚMERO: 6
INDEXADO EM: 
WOS
WOS2
TÃTULO: Light induced degradation in B doped Cz-Si solar cells Full Text
AUTORES: Alexandra Carvalho; Paulo Santos; Jose Coutinho ; Robert Jones; Mark J Rayson; Patrick R Briddon;
PUBLICAÇÃO: 2012, FONTE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, NÚMERO: 10
AUTORES: Alexandra Carvalho; Paulo Santos; Jose Coutinho ; Robert Jones; Mark J Rayson; Patrick R Briddon;
PUBLICAÇÃO: 2012, FONTE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, NÚMERO: 10
3
TÃTULO: Electronic structure of Zn, Cu and Ni impurities in germanium Full Text
AUTORES: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, NÚMERO: 6
AUTORES: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, NÚMERO: 6
4
TÃTULO: Ab initio investigation of phosphorus and boron diffusion in germanium Full Text
AUTORES: Janke, C; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Janke, C; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
5
TÃTULO: Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys Full Text
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Barroso, M ; Goss, JP; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Barroso, M ; Goss, JP; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
6
TÃTULO: Density-functional theory study of Au, Ag and Cu defects in germanium Full Text
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Silva, E; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Silva, E; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
7
TÃTULO: Complexes of self-interstitials with oxygen atoms in germanium Full Text
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, M; Markevich, VP; Murin, LI; Litvinov, VV; Carvalho, A; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, M; Markevich, VP; Murin, LI; Litvinov, VV; Carvalho, A; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
8
TÃTULO: First-principles study of Fe and FeAl defects in SiGe alloys
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Goss, J; Barroso, M ; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: PHYSICAL REVIEW B, VOLUME: 78, NÚMERO: 12
AUTORES: Carvalho, A; Coutinho, J ; Jones, R; Goss, J; Barroso, M ; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: PHYSICAL REVIEW B, VOLUME: 78, NÚMERO: 12
9
TÃTULO: Interstitial carbon-related defects in Si1-xGex alloys
AUTORES: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
AUTORES: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
INDEXADO EM: 
Scopus
Scopus10
TÃTULO: Interstitial carbon-related defects in Si1-xGex alloys
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB; Coutinho, J; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, VOLUME: 131-133
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB; Coutinho, J; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, VOLUME: 131-133
INDEXADO EM: WOS
WOS