H. E. Beere
AuthID: R-00F-C2D
1
TITLE: Composition measurement of epitaxial ScxGa1-xN films Full Text
AUTHORS: Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 6
AUTHORS: Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 6
2
TITLE: Band gaps of wurtzite ScxGa1-xN alloys Full Text
AUTHORS: Tsui, HCL; Goff, LE; Rhode, SK; Pereira, S; Beere, HE; Farrer, I; Nicoll, CA; Ritchie, DA; Moram, MA;
PUBLISHED: 2015, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 106, ISSUE: 13
AUTHORS: Tsui, HCL; Goff, LE; Rhode, SK; Pereira, S; Beere, HE; Farrer, I; Nicoll, CA; Ritchie, DA; Moram, MA;
PUBLISHED: 2015, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 106, ISSUE: 13
INDEXED IN: 
WOS 
CrossRef
WOS CrossRef3
TITLE: The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy. Effect of metal-rich growth conditions on the microstructure of ScxGa1−xN films Full Text
AUTHORS: Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Beere, HE; Farrer, I; Nicoll, CA; Ritchie, DA; Moram, MA;
PUBLISHED: 2015, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 212, ISSUE: 12
AUTHORS: Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Beere, HE; Farrer, I; Nicoll, CA; Ritchie, DA; Moram, MA;
PUBLISHED: 2015, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 212, ISSUE: 12
