W. J. Schaff
AuthID: R-00F-SK1
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TÃTULO: Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN Full Text
AUTORES: Darakchieva, V; Lorenz, K ; Y Xie; Alves, E ; Schaff, WJ; Yamaguchi, T; Nanishi, Y; Ruffenach, S; Moret, M; Briot, O;
PUBLICAÇÃO: 2012, FONTE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, NÚMERO: 1
AUTORES: Darakchieva, V; Lorenz, K ; Y Xie; Alves, E ; Schaff, WJ; Yamaguchi, T; Nanishi, Y; Ruffenach, S; Moret, M; Briot, O;
PUBLICAÇÃO: 2012, FONTE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 209, NÚMERO: 1
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TÃTULO: Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations Full Text
AUTORES: Darakchieva, V; Lorenz, K ; Y Xie; Alves, E ; Hsiao, CL; Chen, LC; Tu, LW; Schaff, WJ; Yamaguchi, T; Nanishi, Y;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 110, NÚMERO: 6
AUTORES: Darakchieva, V; Lorenz, K ; Y Xie; Alves, E ; Hsiao, CL; Chen, LC; Tu, LW; Schaff, WJ; Yamaguchi, T; Nanishi, Y;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 110, NÚMERO: 6
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TÃTULO: Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study Full Text
AUTORES: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLICAÇÃO: 2011, FONTE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336
AUTORES: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLICAÇÃO: 2011, FONTE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336
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TÃTULO: Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material Full Text
AUTORES: Darakchieva, V; Lorenz, K ; Barradas, NP ; Alves, E ; Monemar, B; Schubert, M; Franco, N; Hsiao, CL; Chen, LC; Schaff, WJ; Tu, LW; Yamaguchi, T; Nanishi, Y;
PUBLICAÇÃO: 2010, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 96, NÚMERO: 8
AUTORES: Darakchieva, V; Lorenz, K ; Barradas, NP ; Alves, E ; Monemar, B; Schubert, M; Franco, N; Hsiao, CL; Chen, LC; Schaff, WJ; Tu, LW; Yamaguchi, T; Nanishi, Y;
PUBLICAÇÃO: 2010, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 96, NÚMERO: 8
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TÃTULO: Role of impurities and dislocations for the unintentional n-type conductivity in InN Full Text
AUTORES: Darakchieva, V; Barradas, NP ; Y Xie; Lorenz, K ; Alves, E ; Schubert, M; Persson, POA; Giuliani, F; Munnik, F; Hsiao, CL; Tu, LW; Schaff, WJ;
PUBLICAÇÃO: 2009, FONTE: 3rd South African Conference on Photonic Materials in PHYSICA B-CONDENSED MATTER, VOLUME: 404, NÚMERO: 22
AUTORES: Darakchieva, V; Barradas, NP ; Y Xie; Lorenz, K ; Alves, E ; Schubert, M; Persson, POA; Giuliani, F; Munnik, F; Hsiao, CL; Tu, LW; Schaff, WJ;
PUBLICAÇÃO: 2009, FONTE: 3rd South African Conference on Photonic Materials in PHYSICA B-CONDENSED MATTER, VOLUME: 404, NÚMERO: 22
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TÃTULO: Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry Full Text
AUTORES: Darakchieva, V; Schubert, M; Hofmann, T; Monemar, B; Ching Lien Hsiao; Ting Wei Liu; Li Chyong Chen; Schaff, WJ; Takagi, Y; Nanishi, Y;
PUBLICAÇÃO: 2009, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 95, NÚMERO: 20
AUTORES: Darakchieva, V; Schubert, M; Hofmann, T; Monemar, B; Ching Lien Hsiao; Ting Wei Liu; Li Chyong Chen; Schaff, WJ; Takagi, Y; Nanishi, Y;
PUBLICAÇÃO: 2009, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 95, NÚMERO: 20
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TÃTULO: Free electron behavior in InN: On the role of dislocations and surface electron accumulation Full Text
AUTORES: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Monemar, B; Persson, POA; Giuliani, F; Alves, E ; Lu, H; Schaff, WJ;
PUBLICAÇÃO: 2009, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 94, NÚMERO: 2
AUTORES: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Monemar, B; Persson, POA; Giuliani, F; Alves, E ; Lu, H; Schaff, WJ;
PUBLICAÇÃO: 2009, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 94, NÚMERO: 2
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TÃTULO: Unravelling the free electron behavior in InN Full Text
AUTORES: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Giuliani, F; Y Xie; Persson, POA; Monemar, B; Schaff, WJ; L Hsiao; C Chen; Nanishi, Y;
PUBLICAÇÃO: 2008, FONTE: Conference on Optoelectronic and Microelectronic Materials and Devices in COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES
AUTORES: Darakchieva, V; Hofmann, T; Schubert, M; Sernelius, BE; Giuliani, F; Y Xie; Persson, POA; Monemar, B; Schaff, WJ; L Hsiao; C Chen; Nanishi, Y;
PUBLICAÇÃO: 2008, FONTE: Conference on Optoelectronic and Microelectronic Materials and Devices in COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES
