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TÍTULO: The effect of charge collection recovery in silicon p-n junction detectors irradiated by different particles  Full Text
AUTORES: Verbitskaya, E; Abreu, M ; Anbinderis, P; Anbinderis, T; D'Ambrosio, N; de Boer, W; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Casagrande, L; Chen, W; Cindro, V; Dezillie, B; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Granata, V; Grigoriev, E; Grohmann, S; Hauler, F; Heijne, E; Heising, S; Hempel, O; Herzog, R; Harkonen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Li, Z; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikoski, TO; O'Shea, V; Pagano, S; Palmieri, VG; Paul, S; Solano, BP; Piotrzkowski, K; Pirollo, S; Pretzl, K; Mendes, PR; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Vaitkus, J; da Via, C; Wobst, E; Zavrtanik, M; ...Mais
PUBLICAÇÃO: 2003, FONTE: 4th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, VOLUME: 514, NÚMERO: 1-3
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