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TÍTULO: UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers  Full Text
AUTORES: Pastor, D; Hernandez, S; Cusco, R; Artus, L; Martin, RW; O'Donnell, KP; Briot, O; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6
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