1
TÍTULO: Photoluminescence and Raman study of a tensilely strained Si type-II quantum well on a relaxed SiGe graded buffer  Full Text
AUTORES: Santos, NM; Leitao, JP ; Sobolev, NA; Correia, MR; Carmo, MC; Soares, MR; Kasper, E; Werner, J;
PUBLICAÇÃO: 2009, FONTE: Symposium K on Semiconductor Nanostructures Towards Electronic and Optoelectronic Device Applications II at the E-MRS Spring Meeting in SEMICONDUCTOR NANOSTRUCTURES TOWARDS ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS II (SYMPOSIUM K, E-MRS 2009 SPRING MEETING), VOLUME: 6
INDEXADO EM: Scopus WOS CrossRef: 1