G. Steude
AuthID: R-00J-4TQ
1
TÃTULO: 2.2 eV luminescence in GaN
AUTORES: Hofmann, DM; Kovalev, D; Steude, G; Volm, D; Meyer, BK; Xavier, C; Monteiro, T; Pereira, E; Mokov, EN; Amano, H; Akasaki, I;
PUBLICAÇÃO: 1996, FONTE: 1st International Symposium on Gallium Nitride and Related Materials in GALLIUM NITRIDE AND RELATED MATERIALS, VOLUME: 395
AUTORES: Hofmann, DM; Kovalev, D; Steude, G; Volm, D; Meyer, BK; Xavier, C; Monteiro, T; Pereira, E; Mokov, EN; Amano, H; Akasaki, I;
PUBLICAÇÃO: 1996, FONTE: 1st International Symposium on Gallium Nitride and Related Materials in GALLIUM NITRIDE AND RELATED MATERIALS, VOLUME: 395
INDEXADO EM: 
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