Hugo Manuel Brito Águas
AuthID: R-000-61B
151
TÃTULO: Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films Full Text
AUTORES: águas H.; Silva V.; Ferreira I.; Fortunato E.; Martins R.;
PUBLICAÇÃO: 2000, FONTE: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, VOLUME: 80, NÚMERO: 4
AUTORES: águas H.; Silva V.; Ferreira I.; Fortunato E.; Martins R.;
PUBLICAÇÃO: 2000, FONTE: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, VOLUME: 80, NÚMERO: 4
152
TÃTULO: Performances of nano/amorphous silicon films produced by hot wire plasma assisted technique
AUTORES: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F ; Fortunato, E; Martins, R;
PUBLICAÇÃO: 1998, FONTE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
AUTORES: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F ; Fortunato, E; Martins, R;
PUBLICAÇÃO: 1998, FONTE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
INDEXADO EM: WOS
NO MEU: ResearcherID
153
TÃTULO: Influence of the H-2 dilution and filament temperature on the properties of P doped silicon carbide thin films produced by hot-wire technique
AUTORES: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F; Fortunato, E; Cenimat, RM;
PUBLICAÇÃO: 1998, FONTE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
AUTORES: Ferreira, I; Aguas, H; Mendes, L; Fernandes, F; Fortunato, E; Cenimat, RM;
PUBLICAÇÃO: 1998, FONTE: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, VOLUME: 507
INDEXADO EM: WOS
NO MEU: ResearcherID