Katharina Lorenz
AuthID: R-000-90E
141
TÃTULO: Influence of neutron irradiation and annealing on the optical properties of GaN Full Text
AUTORES: Rodrigues, J; Peres, M; Soares, MJ; Lorenz, K; Marques, JG ; Neves, AJ ; Monteiro, T ;
PUBLICAÇÃO: 2012, FONTE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, NÚMERO: 3-4
AUTORES: Rodrigues, J; Peres, M; Soares, MJ; Lorenz, K; Marques, JG ; Neves, AJ ; Monteiro, T ;
PUBLICAÇÃO: 2012, FONTE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, NÚMERO: 3-4
NO MEU: 
ORCID | 
ResearcherID
ORCID | ResearcherID142
TÃTULO: Ion implantation of Cd and Ag into AlN and GaN Full Text
AUTORES: Miranda, SMC; Kessler, P; Correia, JG ; Vianden, R; Johnston, K; Alves, E ; Lorenz, K;
PUBLICAÇÃO: 2012, FONTE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, NÚMERO: 3-4
AUTORES: Miranda, SMC; Kessler, P; Correia, JG ; Vianden, R; Johnston, K; Alves, E ; Lorenz, K;
PUBLICAÇÃO: 2012, FONTE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, NÚMERO: 3-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID143
TÃTULO: Cd doping of AlN via ion implantation studied with perturbed angular correlation Full Text
AUTORES: Kessler, P; Lorenz, K; Miranda, SMC; Simon, R; Correia, JG ; Johnston, K; Vianden, R; Isolde collaboration the;
PUBLICAÇÃO: 2012, FONTE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, NÚMERO: 3-4
AUTORES: Kessler, P; Lorenz, K; Miranda, SMC; Simon, R; Correia, JG ; Johnston, K; Vianden, R; Isolde collaboration the;
PUBLICAÇÃO: 2012, FONTE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, NÚMERO: 3-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID144
TÃTULO: Doped gallium oxide nanowires for photonics
AUTORES: Nogales, E; Lopez, I; Mendez, B; Piqueras, J; Lorenz, K; Alves, E ; Garcia, JA;
PUBLICAÇÃO: 2012, FONTE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263
AUTORES: Nogales, E; Lopez, I; Mendez, B; Piqueras, J; Lorenz, K; Alves, E ; Garcia, JA;
PUBLICAÇÃO: 2012, FONTE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263
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TÃTULO: High precision determination of the InN content of Al1−xInxN thin films by Rutherford backscattering spectrometry Full Text
AUTORES: Magalhães, S; N.P Barradas; Alves, E; I.M Watson; Lorenz, K;
PUBLICAÇÃO: 2012, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 273
AUTORES: Magalhães, S; N.P Barradas; Alves, E; I.M Watson; Lorenz, K;
PUBLICAÇÃO: 2012, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 273
146
TÃTULO: Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents Full Text
AUTORES: Redondo-Cubero, A; Hierro, A; J.-M Chauveau; Lorenz, K; Tabares, G; Franco, N; Alves, E; Muñoz, E;
PUBLICAÇÃO: 2012, FONTE: CrystEngComm, VOLUME: 14, NÚMERO: 5
AUTORES: Redondo-Cubero, A; Hierro, A; J.-M Chauveau; Lorenz, K; Tabares, G; Franco, N; Alves, E; Muñoz, E;
PUBLICAÇÃO: 2012, FONTE: CrystEngComm, VOLUME: 14, NÚMERO: 5
147
TÃTULO: Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTORES: Redondo-Cubero, A; Brandt, M; Henneberger, F; Alves, E; Lorenz, K;
PUBLICAÇÃO: 2012, FONTE: Oxide-based Materials and Devices III
AUTORES: Redondo-Cubero, A; Brandt, M; Henneberger, F; Alves, E; Lorenz, K;
PUBLICAÇÃO: 2012, FONTE: Oxide-based Materials and Devices III
148
TÃTULO: Zeeman splittings of the 5D 0- 7F 2 transitions of Eu 3+ ions implanted into GaN
AUTORES: Kachkanov, V; O'Donnell, KP; Rice, C; Wolverson, D; Martin, RW; Lorenz, K; Alves, E ; Bockowski, M;
PUBLICAÇÃO: 2011, FONTE: 2010 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1290
AUTORES: Kachkanov, V; O'Donnell, KP; Rice, C; Wolverson, D; Martin, RW; Lorenz, K; Alves, E ; Bockowski, M;
PUBLICAÇÃO: 2011, FONTE: 2010 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1290
149
TÃTULO: The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN Full Text
AUTORES: K.P O’Donnell; I.S Roqan; Ke Wang; Lorenz, K; Alves, E; Boćkowski, M;
PUBLICAÇÃO: 2011, FONTE: Optical Materials, VOLUME: 33, NÚMERO: 7
AUTORES: K.P O’Donnell; I.S Roqan; Ke Wang; Lorenz, K; Alves, E; Boćkowski, M;
PUBLICAÇÃO: 2011, FONTE: Optical Materials, VOLUME: 33, NÚMERO: 7
150
TÃTULO: <title>Radiation damage formation and annealing in GaN and ZnO</title>
AUTORES: Lorenz, K; Peres, M; Franco, N; Marques, JG; Miranda, SMC; Magalhães, S; Monteiro, T; Wesch, W; Alves, E; Wendler, E;
PUBLICAÇÃO: 2011, FONTE: Oxide-based Materials and Devices II
AUTORES: Lorenz, K; Peres, M; Franco, N; Marques, JG; Miranda, SMC; Magalhães, S; Monteiro, T; Wesch, W; Alves, E; Wendler, E;
PUBLICAÇÃO: 2011, FONTE: Oxide-based Materials and Devices II
