Extracting Defect Profiles in Ion-Implanted Gan from Ion Channeling

AuthID
 P-00Y-QR6
6
Author(s)
Caçador, A
·
Jóźwik, P
·
Magalhães, S
·
Wendler, E
·
Tipo de Documento
Article
Year published
2023
Publicado
in Materials Science in Semiconductor Processing, ISSN: 1369-8001
Volume: 166, Páginas: 107702
Indexing
Scopus®
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Publication Identifiers
SCOPUS: 2-s2.0-85164220678
Source Identifiers
ISSN: 1369-8001
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