Al1-Xinxn/Gan Bilayers: Structure, Morphology, and Optical Properties

AuthID
P-003-5FD
Tipo de Documento
Article
Year published
2010
Publicado
in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN: 0370-1972
Volume: 247, Número: 7, Páginas: 1740-1746 (7)
Conference
E-Mrs Fall Meeting on Wide Band Gap Ii-Vi and Iii-V Semiconductors, Date: SEP 14-18, 2009, Location: Warsaw, POLAND, Patrocinadores: E-MRS
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-77954567521
Wos: WOS:000280263700035
Source Identifiers
ISSN: 0370-1972
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