Semiconductor Layer Thickness Impact on Optical and Resistive Switching Behavior of Pulsed Laser Deposited Batio3/Zno Heterostructures

AuthID
 P-006-B25
5
Author(s)
Tipo de Documento
Article
Year published
2013
Publicado
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 102, Número: 21, Páginas: 212903 (4)
Indexing
Wos®
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-84879117930
Wos: WOS:000320620400057
Source Identifiers
ISSN: 0003-6951
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service