High In-Content Ingan Layers Synthesized by Plasma-Assisted Molecular-Beam Epitaxy: Growth Conditions, Strain Relaxation, and In Incorporation Kinetics

AuthID
 P-00J-M7H
10
Author(s)
Wang, Y
·
Chauvat, M
·
Ruterana, P
·
Pouget, S
·
Monroy, E
Tipo de Documento
Article
Year published
2014
Publicado
in J. Appl. Phys. - Journal of Applied Physics, ISSN: 0021-8979
Volume: 116, Número: 23, Páginas: 233504
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ISSN: 0021-8979
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