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Effect of Aln Content on the Lattice Site Location of Terbium Ions in Alxga1-Xn Compounds
AuthID
P-00K-8EP
7
Author(s)
Fialho, M
·
Rodrigues, J
·
Magalhaes, S
·
Correia, MR
·
Monteiro, T
·
Lorenz, K
·
Alves, E
Document Type
Article
Year published
2016
Published
in
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
ISSN: 0268-1242
Volume: 31, Issue: 3, Pages: 035026 (8)
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Wos
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Scopus
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Publication Identifiers
DOI
:
10.1088/0268-1242/31/3/035026
Scopus
: 2-s2.0-84959449564
Wos
: WOS:000372423200030
Source Identifiers
ISSN
: 0268-1242
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