Effect of Aln Content on the Lattice Site Location of Terbium Ions in Alxga1-Xn Compounds

AuthID
 P-00K-8EP
7
Author(s)
Fialho, M
·
Tipo de Documento
Article
Year published
2016
Publicado
in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN: 0268-1242
Volume: 31, Número: 3, Páginas: 035026 (8)
Indexing
Wos®
Scopus®
Crossref®4
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-84959449564
Wos: WOS:000372423200030
Source Identifiers
ISSN: 0268-1242
Export Publication Metadata
Lista Marked
 Adicionar à lista Marked
Info
At this moment we don't have any links to full text documens.

Um espaço para investigadores e suas Instituições

Links Úteis

Ajuda

© 2024 CRACS & Inesc TEC - All Rights Reserved Política de Privacidade | Terms of Service