Mossbauer Parameters of Fe-Related Defects in Group-Iv Semiconductors: First Principles Calculations

AuthID
 P-00K-FVH
4
Author(s)
Wright, E
·
Oberg, S
·
Tipo de Documento
Article
Year published
2016
Publicado
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 119, Número: 18, Páginas: 181509 (16)
Conference
28Th International Conference on Defects in Semiconductors (Icds), Date: JUL 27-31, 2015, Location: Espoo, FINLAND, Patrocinadores: Aalto Univ Sch Sci, Helsinki Reg Transport, Agilent Technologies, Nokia
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Publication Identifiers
SCOPUS: 2-s2.0-84969520087
Wos: WOS:000377717500011
Source Identifiers
ISSN: 0021-8979
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