Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals

AuthID
 P-00P-5R1
10
Author(s)
Markovich, VP
·
Peaker, AR
·
Hamilton, B
·
Litvinov, VV
·
Pokotilo, YM
·
Petukh, AN
·
Lastovskii, SB
·
Rayson, MJ
·
2
Editor(es)
Jantsch, W; Schaffler, F
Tipo de Documento
Proceedings Paper
Year published
2011
Publicado
in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV in Solid State Phenomena, ISSN: 1012-0394
Volume: 178-179, Páginas: 392-+ (2)
Conference
14Th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor (Gadest2011), Date: SEP 25-30, 2011, Location: Loipersdorf Spa & Conf Ctr, Loipersdorf, AUSTRIA, Patrocinadores: Johannes Kepler Univ, Inst Halbleiter & Festkorperphysik, Gesellschaft Halbleiterphysik & Technol, Zentrum Interkulturelle Studien Furstenfeld, Blue Chip Energy BmbH, Host: Loipersdorf Spa & Conf Ctr
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Publication Identifiers
Wos: WOS:000303356300061
Source Identifiers
ISSN: 1012-0394
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