Hfo2-Al2O3 Dielectric Layer for a Performing Metal-Ferroelectric-Insulator-Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)Tio3 Thin Film

AuthID
 P-00S-M19
10
Author(s)
Veltrusk, K
·
Matolin, V
·
Negrea, RF
·
Ghica, C
·
Tipo de Documento
Article
Year published
2020
Publicado
in ACS APPLIED ELECTRONIC MATERIALS, ISSN: 2637-6113
Volume: 2, Número: 9, Páginas: 2780-2787 (8)
Indexing
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Scopus®
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Publication Identifiers
SCOPUS: 2-s2.0-85093665729
Wos: WOS:000575420800012
Source Identifiers
ISSN: 2637-6113
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