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TÃTULO: The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD Full Text
AUTORES: Peres, M; Magalhaes, S; Rodrigues, J; Soares, MJ ; Fellmann, V; Neves, AJ ; Alves, E ; Daudin, B; Lorenz, K ; Monteiro, T ;
PUBLICAÇÃO: 2011, FONTE: Spring Meeting of the European-Materials-Research-Society (E-MRS) in OPTICAL MATERIALS, VOLUME: 33, NÚMERO: 7

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TÃTULO: YSZ:Dy3+ single crystal white emitter
AUTORES: Soares, MRN; Soares, MJ ; Fernandes, AJS; Rino, L; Costa, FM ; Monteiro, T ;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF MATERIALS CHEMISTRY, VOLUME: 21, NÚMERO: 39

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TÃTULO: Damage recovery and optical activity in europium implanted wide gap oxides Full Text
AUTORES: Alves, E ; Marques, C; Franco, N; Alves, LC ; Peres, M; Soares, MJ ; Monteiro, T ;
PUBLICAÇÃO: 2010, FONTE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, NÚMERO: 19

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TÃTULO: Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures Full Text
AUTORES: Magalhaes, S; Lorenz, K ; Franco, N; Barradas, NP ; Alves, E ; Monteiro, T ; Amstatt, B; Fellmann, V; Daudin, B;
PUBLICAÇÃO: 2010, FONTE: 7th International Symposium on Atomic Level Characterizations for New Materials and Devices in SURFACE AND INTERFACE ANALYSIS, VOLUME: 42, NÚMERO: 10-11

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TÃTULO: Effect of Eu2O3 doping on Ta2O5 crystal growth by the laser-heated pedestal technique Full Text
AUTORES: Saggioro, BZ; Andreeta, MRB; Hernandes, AC; Macatrao, M; Peres, M; Costa, FM ; Monteiro, T ; Franco, N; Alves, E ;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF CRYSTAL GROWTH, VOLUME: 313, NÚMERO: 1

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TÃTULO: Erbium-doped nanocrystalline silicon thin films produced by RF sputtering - annealing effect on the Er emission
AUTORES: Cerqueira, MF ; Monteiro, T ; Soares, MJ ; Kozanecki, A; Alpuim, P ; Alves, E ;
PUBLICAÇÃO: 2010, FONTE: 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS23) in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, VOLUME: 7, NÚMERO: 3-4

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TÃTULO: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation Full Text
AUTORES: Magalhaes, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Monteiro, T ; Lorenz, K ;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 108, NÚMERO: 8

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TÃTULO: High temperature annealing of Europium implanted AlN Full Text
AUTORES: Lorenz, K ; Magalhaes, S; Alves, E ; Peres, M; Monteiro, T ; Neves, AJ ; Bockowski, M;
PUBLICAÇÃO: 2010, FONTE: 15th International Conference of the Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, NÚMERO: 19

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TÃTULO: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots Full Text
AUTORES: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, NÚMERO: 7

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