Vitor José Babau Torres


AuthID: R-000-HKG

Publicações Confirmadas: 64



31
TÍTULO: Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys  Full Text
AUTORES: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 88, NÚMERO: 14
INDEXADO EM: Scopus WOS CrossRef: 5
NO MEU: ORCID
32
TÍTULO: Local vibrations of interstitial carbon in SiGe alloys  Full Text
AUTORES: Khirunenkko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
INDEXADO EM: Scopus WOS
33
TÍTULO: Local vibrations of substitutional carbon in SiGe alloys
AUTORES: Khirunenko, L; Pomozov, Y; Sosnin, M; Torres, VJB ; Coutinho, J ; Jones, R; Abrosimov, NV; Riemann, H; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1
INDEXADO EM: Scopus WOS
NO MEU: ORCID
34
TÍTULO: Studies of the VO centre in Ge using first principles cluster calculations  Full Text
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
INDEXADO EM: Scopus WOS CrossRef: 3
NO MEU: ORCID
35
TÍTULO: Theory of anharmonicity on bond-centered hydrogen oscillators in silicon  Full Text
AUTORES: Coutinho, J ; Torres, VJB ; Pereira, RN ; Nielsen, BB; Jones, R; Briddon, PR;
PUBLICAÇÃO: 2006, FONTE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 1
NO MEU: ORCID
36
TÍTULO: Vacancy-dioxygen centers in Si-rich SiGe alloys  Full Text
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
37
TÍTULO: Ab-initio studies of local vibrations of small self-interstitial aggregates in silicon
AUTORES: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXADO EM: Scopus WOS
NO MEU: ORCID
38
TÍTULO: Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals
AUTORES: Pereira, RN ; Nielsen, BB; Coutinho, J ; Torres, VJB ; Jones, R; Ohya, T; Itoh, KM; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: PHYSICAL REVIEW B, VOLUME: 72, NÚMERO: 11
INDEXADO EM: Scopus WOS CrossRef: 4
NO MEU: ORCID
39
TÍTULO: Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
AUTORES: Markevich, VP; Murin, LI; Lastovskii, SB; Medvedeva, IF; Lindstrom, JL; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXADO EM: Scopus WOS CrossRef: 10
NO MEU: ORCID
40
TÍTULO: Electronic structure and Jahn-Teller instabilities in a single vacancy in Ge  Full Text
AUTORES: Coutinho, J ; Jones, R; Torres, VJB ; Barroso, M ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, NÚMERO: 48
INDEXADO EM: Scopus WOS CrossRef: 54
NO MEU: ORCID
Página 4 de 7. Total de resultados: 64.

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