301
TITLE: Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence  Full Text
AUTHORS: Martin, RW; Rading, D; Kersting, R; Tallarek, E; Nogales, E; Amabile, D; Wang, K; Katchkanov, V; Trager Cowan, C; O'Donnell, KP; Watson, IM; Matias, V; Vantomme, A; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: 6th International Conference on Nitride Semiconductors (ICNS-6) in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6, VOLUME: 3, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
302
TITLE: Diffusion processes in seeded and unseeded SBT thin films with varied stoichiometry  Full Text
AUTHORS: Aguilar, GG ; Wu, A; Miguel A. Reis ; Ramos, AR ; Salvado, IMM ; Alves, E ; Costa, MEV ;
PUBLISHED: 2006, SOURCE: SURFACE SCIENCE, VOLUME: 600, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 10
303
TITLE: Effect of annealing temperature on luminescence in Eu implanted GaN  Full Text
AUTHORS: Bodiou, L; Oussif, A; Braud, A; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef
304
TITLE: Effect of the matrix on the 1.5 mu m photoluminescence of Er-doped silicon quantum dots
AUTHORS: Cerqueira, MF ; Stepikhova, M; Losurdo, M; Monteiro, T ; Soares, MJ ; Peres, M; Neves, A ; Alves, E ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 2
INDEXED IN: Scopus WOS
305
TITLE: Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing  Full Text
AUTHORS: Nogales, E; Martin, RW; O'Donnell, KP; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
306
TITLE: Hardware and software improvements in the Hotbird
AUTHORS: Franco, N; Alves, E ; Barradas, NP ;
PUBLISHED: 2006, SOURCE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, ISSUE: PART 2
INDEXED IN: Scopus WOS
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307
TITLE: High temperature annealing of rare earth implanted GaN films: Structural and optical properties  Full Text
AUTHORS: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, ISSUE: 6-7
INDEXED IN: Scopus WOS CrossRef: 39
308
TITLE: Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques  Full Text
AUTHORS: Ferreira, I ; Fortunato, E ; Vilarinho, P ; Viana, AS ; Ramos, AR ; Alves, E ; Martins, R ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef: 28
309
TITLE: Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques
AUTHORS: Johnston, K; Henry, MO; McCabe, D; McGlynn, E; Dietrich, M; Alves, E ; Xia, M;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef
310
TITLE: Implantation of Er/Yb ions into gallium nitride
AUTHORS: Prajzler, V; Jerabek, V; Huttel, I; Alves, E ; Buchal, C; Spirkova, J; Oswald, J; Perina, V; Boldyryeva, H; Zavadil, J;
PUBLISHED: 2006, SOURCE: WSEAS Transactions on Electronics, VOLUME: 3, ISSUE: 4
INDEXED IN: Scopus
IN MY: ORCID
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