Eduardo Jorge da Costa Alves


AuthID: R-000-4EK

Publicações Confirmadas: 597



391
TÍTULO: Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy  Full Text
AUTORES: Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K ; Wahl, U ; Alves, E ; Matias, V; Mamor, M;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
392
TÍTULO: Characterization of FePt nanoparticles in FePt/C multilayers  Full Text
AUTORES: Barradas, NP ; Alves, E ; Babonneau, D;
PUBLICAÇÃO: 2004, FONTE: 16th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 219, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
393
TÍTULO: Characterization of hard DC-sputtered Si-based TiN coatings: the effect of composition and ion bombardment  Full Text
AUTORES: Ribeiro, E; Rebouta, L ; Carvalho, S ; Vaz, F ; Fuentes, GG; Rodriguez, R; Zazpe, M; Alves, E ; Goudeau, P; Riviere, JP;
PUBLICAÇÃO: 2004, FONTE: 31st International Conference on Metallurgical Coatings and Thin Films in SURFACE & COATINGS TECHNOLOGY, VOLUME: 188, NÚMERO: 1-3 SPEC.ISS.
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
394
TÍTULO: Comparative study of radiation damage in GaN and InGaN by 400 keV Au implantation  Full Text
AUTORES: Wendler, E; Wesch, W; Alves, E ; Kamarou, A;
PUBLICAÇÃO: 2004, FONTE: 12th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 218, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
395
TÍTULO: Compositional profiles in silica-based sol-gel films doped with erbium and silver, by RBS and ERDA  Full Text
AUTORES: Marques, AC ; Almeida, RM ; Ramos, AR ; Alves, E ;
PUBLICAÇÃO: 2004, FONTE: 12th International Workshop on Sol-Gel-Science and Technology (Sol-Gel 2003) in JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, VOLUME: 31, NÚMERO: 1-3
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
396
TÍTULO: Copper nanocolloids in MgO crystals implanted with Cu ions  Full Text
AUTORES: Savoini, B; Caceres, D; Gonzalez, R; Chen, Y; Pinto, JV ; da Silva, RC; Alves, E ;
PUBLICAÇÃO: 2004, FONTE: 12th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 218, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
397
TÍTULO: Corrosion behaviour of single layered ZrN xO y thin films in artificial sweat solutions
AUTORES: Ariza, E ; Rocha, LA; Ferreira, SC; Vaz, F ; Cunha, L ; Carvalho, P; Rebouta, L; Alves, E ; Ph Goudeau; Riviere, JP;
PUBLICAÇÃO: 2004, FONTE: European Corrosion Conference: Long Term Prediction and Modelling of Corrosion, EUROCORR 2004 in EUROCORR 2004 - European Corrosion Conference: Long Term Prediction and Modelling of Corrosion
INDEXADO EM: Scopus
NO MEU: ORCID
398
TÍTULO: Corrosion resistance of ZrNxOy thin films obtained by rf reactive magnetron sputtering  Full Text
AUTORES: Ariza, E ; Rocha, LA ; Vaz, F ; Cunha, L ; Ferreira, SC; Carvalho, P; Rebouta, L ; Alves, E ; Goudeau, P; Riviere, JP;
PUBLICAÇÃO: 2004, FONTE: 31st International Conference on Metallurgical Coatings and Thin Films in THIN SOLID FILMS, VOLUME: 469, NÚMERO: SPEC. ISS.
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
399
TÍTULO: Defect production in nitrogen implanted sapphire  Full Text
AUTORES: Alves, E ; Marques, C; Ononye, LC; McHargue, C;
PUBLICAÇÃO: 2004, FONTE: 12th International Conference on Radiation Effects in Insulators in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 218, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
400
TÍTULO: Degradation of particle detectors based on a-Si : H by 1.5 Mev He-4 and 1 MeV protons  Full Text
AUTORES: Schwarz, R ; Braz, T; Sanguino, P; Ferreira, P; Macarico, A; Vieira, M ; Marques, C; Alves, E ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID | ResearcherID
Página 40 de 60. Total de resultados: 597.

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