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281

TÃTULO: Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer
AUTORES: Fortunato, E ; Goncalves, A; de Carvalho, CN ; Pimentel, A ; Lavareda, G ; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting in FLEXIBLE ELECTRONICS 2004-MATERIALS AND DEVICE TECHNOLOGY, VOLUME: 814

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282

TÃTULO: Ethanol vapour detector based in porous a-Si : H films produced by HW-CVD technique Full Text
AUTORES: Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on New Materials and Technologies in Sensor Applications in SENSORS AND ACTUATORS B-CHEMICAL, VOLUME: 100, NÚMERO: 1-2

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283

TÃTULO: Flexible position sensitive photodetectors based on a-Si : H hetero structures Full Text
AUTORES: Fortunato, E ; Pereira, L ; Aguas, H ; Ferreira, I; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: SENSORS AND ACTUATORS A-PHYSICAL, VOLUME: 116, NÚMERO: 1

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284

TÃTULO: Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz
AUTORES: Raniero, L; Martins, R ; Aguas, H ; Zang, S; Ferreira, I ; Pereira, L ; Fortunato, E ; Boufendi, L;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456

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285

TÃTULO: High field-effect mobility zinc oxide thin film transistors produced at room temperature Full Text
AUTORES: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Journal of Non-Crystalline Solids, VOLUME: 338-340, NÚMERO: 1 SPEC. ISS.

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286

TÃTULO: High field-effect mobility zinc oxide thin film transistors produced at room temperature Full Text
AUTORES: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338

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287

TÃTULO: High mobility nanocrystalline indium zinc oxide deposited at room temperature
AUTORES: Fortunato, E ; Pimentel, A ; Goncalves, A; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting in INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, VOLUME: 811

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288