31
TÍTULO: Enhancement of the electrical properties of ITO deposited on polymeric substrates by using a ZnO buffer layer
AUTORES: Fortunato, E ; Goncalves, A; de Carvalho, CN ; Pimentel, A ; Lavareda, G ; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting in FLEXIBLE ELECTRONICS 2004-MATERIALS AND DEVICE TECHNOLOGY, VOLUME: 814
INDEXADO EM: WOS CrossRef: 2
32
TÍTULO: High field-effect mobility zinc oxide thin film transistors produced at room temperature  Full Text
AUTORES: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Journal of Non-Crystalline Solids, VOLUME: 338-340, NÚMERO: 1 SPEC. ISS.
INDEXADO EM: Scopus CrossRef
NO MEU: ORCID
33
TÍTULO: High field-effect mobility zinc oxide thin film transistors produced at room temperature  Full Text
AUTORES: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338
INDEXADO EM: WOS
34
TÍTULO: High mobility nanocrystalline indium zinc oxide deposited at room temperature
AUTORES: Fortunato, E ; Pimentel, A ; Goncalves, A; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting in INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, VOLUME: 811
INDEXADO EM: Scopus WOS CrossRef
NO MEU: ORCID
35
TÍTULO: Next generation of thin film transistors based on zinc oxide
AUTORES: Fortunato, E ; Barquinha, P ; Pimentel, A ; Goncalves, A; Pereira, L ; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting in INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, VOLUME: 811
INDEXADO EM: Scopus WOS
36
TÍTULO: Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature  Full Text
AUTORES: Fortunato, EMC ; Barquinha, PMC ; Pimentel, ACMBG ; Goncalves, AMF; Marques, AJS; Martins, RFP ; Pereira, LMN ;
PUBLICAÇÃO: 2004, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 85, NÚMERO: 13
INDEXADO EM: Scopus WOS CrossRef: 472
Página 4 de 4. Total de resultados: 36.