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161

TÃTULO: Mobility-lifetime product in microdoped amorphous silicon deposited by hot-wipe chemical vapor deposition Full Text
AUTORES: Conde, JP ; Castanha, R; Brogueira, P ; Chu, V ;
PUBLICAÇÃO: 1998, FONTE: 17th International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (ICAMS 17) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 227, NÚMERO: PART 1

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162

TÃTULO: Photoluminescence of polymer-like amorphous carbon films grown in different plasma reactors Full Text
AUTORES: Bouree, JE; Heitz, T; Godet, C; Drevillon, B; Conde, JP ; Chu, V ; Berberan Santos, MN ; Fedorov, A ;
PUBLICAÇÃO: 1998, FONTE: 17th International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (ICAMS 17) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 227, NÚMERO: PART 1

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163

TÃTULO: Role of RF power and gas mixture in some optical and photoluminescence properties of dual-plasma a-C : H films
AUTORES: Heitz, T; Godet, C; Bouree, JE; Drevillon, B; Chu, V; Conde, JP ; Clerc, C;
PUBLICAÇÃO: 1998, FONTE: Materials-Research-Society Symposium on Flat-Panel Display Materials in FLAT-PANEL DISPLAY MATERIALS-1998, VOLUME: 508

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164

TÃTULO: Wide band gap a-SiC : H films for optoelectronic applications Full Text
AUTORES: Giorgis, F; Giuliani, F; Pirri, CF; Tresso, E; Conde, JP ; Chu, V ;
PUBLICAÇÃO: 1998, FONTE: 17th International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (ICAMS 17) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 227, NÚMERO: PART 1

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165

TÃTULO: Amorphous and microcrystalline silicon deposited by low-power electron-cyclotron resonance plasma-enhanced chemical-vapor deposition
AUTORES: Conde, JP ; Schotten, V; Arekat, S; Brogueira, P ; Sousa, R; Chu, V ;
PUBLICAÇÃO: 1997, FONTE: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, VOLUME: 36, NÚMERO: 1A

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166

TÃTULO: Amorphous and microcrystalline silicon films obtained by hot-wire chemical vapour deposition using high filament temperatures between 1900 and 2500 degrees C
AUTORES: Conde, JP ; Brogueira, P ; Chu, V ;
PUBLICAÇÃO: 1997, FONTE: PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, VOLUME: 76, NÚMERO: 3

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167

TÃTULO: Amorphous silicon thin-film transistors with a hot-wire active-layer deposited at high growth rate
AUTORES: Chu, V ; Jarego, J; Silva, H; Silva, T; Boucinha, M; Brogueira, P ; Conde, JP ;
PUBLICAÇÃO: 1997, FONTE: Symposium on Amorphous and Microcrystalline Silicon Technology in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, VOLUME: 467

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168

TÃTULO: Amorphous silicon-carbon alloys and amorphous carbon from direct methane and ethylene activation by ECR
AUTORES: Conde, JP ; Chu, V; Giorgis, F; Pirri, CF; Arekat, S;
PUBLICAÇÃO: 1997, FONTE: Proceedings of the 1997 MRS Spring Symposium in Materials Research Society Symposium - Proceedings, VOLUME: 467

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169