Rodrigo Ferrao Paiva Martins
AuthID: R-000-FKV
181
TITLE: A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress Full Text
AUTHORS: Niang, KM; Barquinha, PMC; Martins, RFP; Cobb, B; Powell, MJ; Flewitt, AJ;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 9
AUTHORS: Niang, KM; Barquinha, PMC; Martins, RFP; Cobb, B; Powell, MJ; Flewitt, AJ;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 9
182
TITLE: InGaZnO TFT behavioral model for IC design Full Text
AUTHORS: Pydi Bahubalindrun ; Vitor Tavares ; Pedro Barquinha; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, VOLUME: 87, ISSUE: 1
AUTHORS: Pydi Bahubalindrun ; Vitor Tavares ; Pedro Barquinha; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, VOLUME: 87, ISSUE: 1
183
TITLE: Electrochemical Transistor Based on Tungsten Oxide with Optoelectronic Properties
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
AUTHORS: Paul Grey; Luis Pereira; Sonia Pereira; Pedro Barquinha; Ines Cunha; Rodrigo Martins; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS) in TECHNOLOGICAL INNOVATION FOR CYBER-PHYSICAL SYSTEMS, VOLUME: 470
184
TITLE: InGaZnO Thin-Film-Transistor-Based Four-Quadrant High-Gain Analog Multiplier on Glass
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Jerome Borme; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 37, ISSUE: 4
AUTHORS: Pydi Ganga Bahubalindruni ; Vitor Grade Tavares ; Jerome Borme; Pedro Guedes de Oliveira; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: IEEE ELECTRON DEVICE LETTERS, VOLUME: 37, ISSUE: 4
185
TITLE: Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors Full Text
AUTHORS: Ao Liu; Guoxia X Liu; Huihui H Zhu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Fukai K Shan;
PUBLISHED: 2016, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 4, ISSUE: 20
AUTHORS: Ao Liu; Guoxia X Liu; Huihui H Zhu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Fukai K Shan;
PUBLISHED: 2016, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 4, ISSUE: 20
186
TITLE: The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering Full Text
AUTHORS: Zubizarreta, C; G Berasategui, EG; Ciarsolo, I; Barriga, J; Gaspar, D; Martins, R; Fortunato, E;
PUBLISHED: 2016, SOURCE: 10th International Conference on Surfaces, Coatings and Nano-Structured Materials (NANOSMAT) in APPLIED SURFACE SCIENCE, VOLUME: 380
AUTHORS: Zubizarreta, C; G Berasategui, EG; Ciarsolo, I; Barriga, J; Gaspar, D; Martins, R; Fortunato, E;
PUBLISHED: 2016, SOURCE: 10th International Conference on Surfaces, Coatings and Nano-Structured Materials (NANOSMAT) in APPLIED SURFACE SCIENCE, VOLUME: 380
INDEXED IN: 
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TITLE: Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Full Text
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 379
AUTHORS: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R;
PUBLISHED: 2016, SOURCE: APPLIED SURFACE SCIENCE, VOLUME: 379
INDEXED IN: WOS
WOS188
TITLE: Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric Full Text
AUTHORS: Ao Liu; Guoxia X Liu; Huihui H Zhu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Fukai K Shan;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 23
AUTHORS: Ao Liu; Guoxia X Liu; Huihui H Zhu; Byoungchul Shin; Elvira Fortunato; Rodrigo Martins; Fukai K Shan;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 23
189
TITLE: Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance Full Text
AUTHORS: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, ISSUE: 6
AUTHORS: Pydi Ganga Bahubalindruni ; Asal Kiazadeh; Allegra Sacchetti; Jorge Martins ; Ana Rovisco; Vitor Grade Tavares ; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha;
PUBLISHED: 2016, SOURCE: JOURNAL OF DISPLAY TECHNOLOGY, VOLUME: 12, ISSUE: 6
190
TITLE: Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interface
AUTHORS: Jonas Deuermeier; Thorsten J M Bayer; Hiroshi Yanagi; Asal Kiazadeh; Rodrigo Martins; Andreas Klein; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: MATERIALS RESEARCH EXPRESS, VOLUME: 3, ISSUE: 4
AUTHORS: Jonas Deuermeier; Thorsten J M Bayer; Hiroshi Yanagi; Asal Kiazadeh; Rodrigo Martins; Andreas Klein; Elvira Fortunato;
PUBLISHED: 2016, SOURCE: MATERIALS RESEARCH EXPRESS, VOLUME: 3, ISSUE: 4
INDEXED IN: WOS CrossRef
WOS CrossRef