Ulrich Wahl
AuthID: R-000-HB1
51
TÃTULO: Emission channeling studies of defect annealing in the wide band gap semiconductors ZnTe and ZnSe Full Text
AUTORES: Bharuth-Ram, K; Hofsäss, H; Restle, M; Wahl, U;
PUBLICAÇÃO: 1999, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 156, NÚMERO: 1-4
AUTORES: Bharuth-Ram, K; Hofsäss, H; Restle, M; Wahl, U;
PUBLICAÇÃO: 1999, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 156, NÚMERO: 1-4
52
TÃTULO: Lattice location of implanted Cu in Si Full Text
AUTORES: Wahl, U; J.G Correia; Vantomme, A; Langouche, G;
PUBLICAÇÃO: 1999, FONTE: Physica B: Condensed Matter, VOLUME: 273-274
AUTORES: Wahl, U; J.G Correia; Vantomme, A; Langouche, G;
PUBLICAÇÃO: 1999, FONTE: Physica B: Condensed Matter, VOLUME: 273-274
53
TÃTULO: Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe Full Text
AUTORES: Bharuth-Ram, K; Restle, M; Hofsäss, H; Ronning, C; Wahl, U;
PUBLICAÇÃO: 1999, FONTE: Physica B: Condensed Matter, VOLUME: 273-274
AUTORES: Bharuth-Ram, K; Restle, M; Hofsäss, H; Ronning, C; Wahl, U;
PUBLICAÇÃO: 1999, FONTE: Physica B: Condensed Matter, VOLUME: 273-274
54
TÃTULO: Lattice sites and stability of implanted Er in FZ and CZ Si
AUTORES: Wahl, U; Correia, JG ; Langouche, G; Vantomme, A;
PUBLICAÇÃO: 1998, FONTE: Symposium on Materials and Devices for Silicon-Based Optoelectronics, at the 1997 MRS Fall Meeting in MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, VOLUME: 486
AUTORES: Wahl, U; Correia, JG ; Langouche, G; Vantomme, A;
PUBLICAÇÃO: 1998, FONTE: Symposium on Materials and Devices for Silicon-Based Optoelectronics, at the 1997 MRS Fall Meeting in MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, VOLUME: 486
INDEXADO EM: 
Scopus 
WOS
Scopus WOS NO MEU: 
ORCID | ResearcherID
ORCID | ResearcherID55
TÃTULO: The influence of oxygen on the lattice sites of rare earths in silicon Full Text
AUTORES: Wahl, U; Vantomme, A; Langouche, G; Correia, JG ;
PUBLICAÇÃO: 1998, FONTE: Symposium on Light Emission from Silicon - Procress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in JOURNAL OF LUMINESCENCE, VOLUME: 80, NÚMERO: 1-4
AUTORES: Wahl, U; Vantomme, A; Langouche, G; Correia, JG ;
PUBLICAÇÃO: 1998, FONTE: Symposium on Light Emission from Silicon - Procress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in JOURNAL OF LUMINESCENCE, VOLUME: 80, NÚMERO: 1-4
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID56
TÃTULO: Direct determination of atomic positions on the Cu(110)-(1×2)-H surface
AUTORES: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLICAÇÃO: 1998, FONTE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 57, NÚMERO: 15
AUTORES: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLICAÇÃO: 1998, FONTE: Physical Review B - Condensed Matter and Materials Physics, VOLUME: 57, NÚMERO: 15
INDEXADO EM: Scopus
Scopus NO MEU: ORCID
ORCID57
TÃTULO: Backscattering/channeling study of high-dose rare-earth implants into Si Full Text
AUTORES: Vantomme, A; Wahl, U; Wu, MF; Hogg, S; Pattyn, H; Langouche, G; Bender, H;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
AUTORES: Vantomme, A; Wahl, U; Wu, MF; Hogg, S; Pattyn, H; Langouche, G; Bender, H;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID58
TÃTULO: Direct determination of the lattice site of H atoms on the (1 x 2) reconstructed Cu (110) surface Full Text
AUTORES: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
AUTORES: Mijiritskii, AV; Wahl, U; Langelaar, MH; Boerma, DO;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
NO MEU: ORCID | ResearcherID
ORCID | ResearcherID59
TÃTULO: Lattice site location studies of ion implanted Li-8 in GaN Full Text
AUTORES: Dalmer, M; Restle, M; Sebastian, M; Vetter, U; Hofsass, H; Bremser, MD; Ronning, C; Davis, RF; Wahl, U; Bharuth Ram, K;
PUBLICAÇÃO: 1998, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 84, NÚMERO: 6
AUTORES: Dalmer, M; Restle, M; Sebastian, M; Vetter, U; Hofsass, H; Bremser, MD; Ronning, C; Davis, RF; Wahl, U; Bharuth Ram, K;
PUBLICAÇÃO: 1998, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 84, NÚMERO: 6
INDEXADO EM: Scopus WOS
Scopus WOS NO MEU: ORCID | ResearcherID
ORCID | ResearcherID60
TÃTULO: Lattice sites and damage annealing of implanted Tm and Er in Si
AUTORES: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLICAÇÃO: 1997, FONTE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469
AUTORES: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLICAÇÃO: 1997, FONTE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469
