I. Boerasu
AuthID: R-006-KEH
11
TÃTULO: Properties of ferroelectric films based on Nb-modified PZT produced by PLD technique Full Text
AUTORES: Boerasu, I; Pereira, M ; Vasilevskiy, M ; Gomes, MJM ; Watts, B; Leccabue, F; Vilarinho, PM ;
PUBLICAÇÃO: 2003, FONTE: Conference on Physics and Chemistry of Advanced Laser Materials Processing in APPLIED SURFACE SCIENCE, VOLUME: 208, NÚMERO: 1
AUTORES: Boerasu, I; Pereira, M ; Vasilevskiy, M ; Gomes, MJM ; Watts, B; Leccabue, F; Vilarinho, PM ;
PUBLICAÇÃO: 2003, FONTE: Conference on Physics and Chemistry of Advanced Laser Materials Processing in APPLIED SURFACE SCIENCE, VOLUME: 208, NÚMERO: 1
12
TÃTULO: Electric properties of PZTN (65/35/x) thin films deposited by sol-gel Full Text
AUTORES: Pereira, M ; Boerasu, I; Gomes, MJM ; Watts, B; Leccabue, F;
PUBLICAÇÃO: 2003, FONTE: 6th European Conference on Applications of Polar Dielectrics (ECAPD) in FERROELECTRICS, VOLUME: 293, NÚMERO: 1
AUTORES: Pereira, M ; Boerasu, I; Gomes, MJM ; Watts, B; Leccabue, F;
PUBLICAÇÃO: 2003, FONTE: 6th European Conference on Applications of Polar Dielectrics (ECAPD) in FERROELECTRICS, VOLUME: 293, NÚMERO: 1
13
TÃTULO: Structural and piezoelectric properties of rare earth doped PbTiO3 ceramics Full Text
AUTORES: Dimitriu, E; Boerasu, I; Pereira, M ; Gomes, MJM ; Tanasoiu, C;
PUBLICAÇÃO: 2002, FONTE: 10th International Meeting on Ferroelectricity (IMF-10) in FERROELECTRICS, VOLUME: 273, NÚMERO: 1
AUTORES: Dimitriu, E; Boerasu, I; Pereira, M ; Gomes, MJM ; Tanasoiu, C;
PUBLICAÇÃO: 2002, FONTE: 10th International Meeting on Ferroelectricity (IMF-10) in FERROELECTRICS, VOLUME: 273, NÚMERO: 1
14
TÃTULO: Optical properties of PZT 65/35 thin films deposited by sol-gel Full Text
AUTORES: Boerasu, I; Vasilevskiy, MI ; Pereira, M ; Costa, MF; Gomes, MJM ;
PUBLICAÇÃO: 2002, FONTE: 10th International Meeting on Ferroelectricity in FERROELECTRICS, VOLUME: 268, NÚMERO: 1
AUTORES: Boerasu, I; Vasilevskiy, MI ; Pereira, M ; Costa, MF; Gomes, MJM ;
PUBLICAÇÃO: 2002, FONTE: 10th International Meeting on Ferroelectricity in FERROELECTRICS, VOLUME: 268, NÚMERO: 1
15
TÃTULO: Considerations on the semiconducting properties of PZT 65/35 thin films
AUTORES: Boerasu, I; Pintilie, L; Gomes, MJM; Perreira, M;
PUBLICAÇÃO: 2001, FONTE: 25th International Semiconductor Conference in CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS
AUTORES: Boerasu, I; Pintilie, L; Gomes, MJM; Perreira, M;
PUBLICAÇÃO: 2001, FONTE: 25th International Semiconductor Conference in CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS
INDEXADO EM: 
WOS
WOS16
TÃTULO: Structural and optical characterization of Nb-doped PZT 65/35 thin films grown by sol-gel and laser ablation techniques
AUTORES: Boerasu, I; Pereira, M; Gomes, MJM; Ferreira, MIC;
PUBLICAÇÃO: 2000, FONTE: Romanian Conference on Advanced Materials (ROCAM 2000) in JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, VOLUME: 2, NÚMERO: 5
AUTORES: Boerasu, I; Pereira, M; Gomes, MJM; Ferreira, MIC;
PUBLICAÇÃO: 2000, FONTE: Romanian Conference on Advanced Materials (ROCAM 2000) in JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, VOLUME: 2, NÚMERO: 5
INDEXADO EM: WOS
WOS17
TÃTULO: Preparation and ferroelectric properties of graded Pb(TiXZr1-X)O-3 thin films
AUTORES: Boerasu, I; Pintilie, L; Matei, I; Pintilie, I;
PUBLICAÇÃO: 2000, FONTE: 23rd International Semiconductor Conference (CAS 2000) in 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS
AUTORES: Boerasu, I; Pintilie, L; Matei, I; Pintilie, I;
PUBLICAÇÃO: 2000, FONTE: 23rd International Semiconductor Conference (CAS 2000) in 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS
INDEXADO EM: WOS
WOS18
TÃTULO: Preparation and ferroelectric properties of graded Pb(Tix Zr1-x)O3 thin films
AUTORES: Boerasu, I; Pintilie, L; Matei, I; Pintilie, I;
PUBLICAÇÃO: 2000, FONTE: 2000 International Semiconductor Conference in Proceedings of the International Semiconductor Conference, CAS, VOLUME: 2
AUTORES: Boerasu, I; Pintilie, L; Matei, I; Pintilie, I;
PUBLICAÇÃO: 2000, FONTE: 2000 International Semiconductor Conference in Proceedings of the International Semiconductor Conference, CAS, VOLUME: 2
INDEXADO EM: 
Scopus
Scopus