S. Uthanna
AuthID: R-006-QTQ
1
TÃTULO: Investigations on Compositional, Structural and Optical Properties of Thermally Oxidized HfO2 Films
AUTORES: Venkataiah, S; Chandra, SVJ; Babu, MV; Uthanna, S;
PUBLICAÇÃO: 2021, FONTE: ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING
AUTORES: Venkataiah, S; Chandra, SVJ; Babu, MV; Uthanna, S;
PUBLICAÇÃO: 2021, FONTE: ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING
INDEXADO EM: 
Scopus 
WOS
Scopus WOS2
TÃTULO: Post-deposition annealing influenced structural and electrical properties of Al/TiO2/Si gate capacitors Full Text
AUTORES: Chandra C Sekhar; Kondaiah, P; Mohan M Rao; Jagadeesh V J Chandra; Uthanna, S;
PUBLICAÇÃO: 2013, FONTE: SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 62
AUTORES: Chandra C Sekhar; Kondaiah, P; Mohan M Rao; Jagadeesh V J Chandra; Uthanna, S;
PUBLICAÇÃO: 2013, FONTE: SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 62
3
TÃTULO: Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric. Physical properties of Silicon MOS devices with TiO2 gate dielectric Full Text
AUTORES: Chandra C Sekhar; Kondaiah, P; Jagadeesh Chandra, SVJ; Mohan M Rao; Uthanna, S;
PUBLICAÇÃO: 2012, FONTE: SURFACE AND INTERFACE ANALYSIS, VOLUME: 44, NÚMERO: 9
AUTORES: Chandra C Sekhar; Kondaiah, P; Jagadeesh Chandra, SVJ; Mohan M Rao; Uthanna, S;
PUBLICAÇÃO: 2012, FONTE: SURFACE AND INTERFACE ANALYSIS, VOLUME: 44, NÚMERO: 9
4
TÃTULO: The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta2O5)(0.85)(TiO2)(0.15) films Full Text
AUTORES: Chandra C Sekhar; Uthanna, S; Martins, R ; Jagadeesh Chandra, SVJ; Elangovan, E;
PUBLICAÇÃO: 2012, FONTE: Symposium I on Advances in Transparent Electronics, from Materials to Devices III/Fall Meeting of the European-Materials-Research-Society (E-MRS) in E-MRS 2011 FALL SYMPOSIUM I: ADVANCES IN TRANSPARENT ELECTRONICS, FROM MATERIALS TO DEVICES III, VOLUME: 34, NÚMERO: 1
AUTORES: Chandra C Sekhar; Uthanna, S; Martins, R ; Jagadeesh Chandra, SVJ; Elangovan, E;
PUBLICAÇÃO: 2012, FONTE: Symposium I on Advances in Transparent Electronics, from Materials to Devices III/Fall Meeting of the European-Materials-Research-Society (E-MRS) in E-MRS 2011 FALL SYMPOSIUM I: ADVANCES IN TRANSPARENT ELECTRONICS, FROM MATERIALS TO DEVICES III, VOLUME: 34, NÚMERO: 1
5
TÃTULO: Substrate Temperature Influenced Structural and Electrical Behaviour of RF Magnetron Sputtered Ag2Cu2O3 Films Full Text
AUTORES: Sreedhar, A; Hari Prasad P Reddy; Uthanna, S; Martins, R ; Elangovan, E; Pierson, JF;
PUBLICAÇÃO: 2011, FONTE: Fall Meeting of the European-Materials-Research-Society (E-MRS)/Symposium H - Novel Materials for Electronics, Optoelectronics, Photovoltaics and Energy Saving Applications in ACTA PHYSICA POLONICA A, VOLUME: 120, NÚMERO: 6A
AUTORES: Sreedhar, A; Hari Prasad P Reddy; Uthanna, S; Martins, R ; Elangovan, E; Pierson, JF;
PUBLICAÇÃO: 2011, FONTE: Fall Meeting of the European-Materials-Research-Society (E-MRS)/Symposium H - Novel Materials for Electronics, Optoelectronics, Photovoltaics and Energy Saving Applications in ACTA PHYSICA POLONICA A, VOLUME: 120, NÚMERO: 6A
INDEXADO EM: WOS
WOS6
TÃTULO: Influence of substrate and selenization temperatures on the growth of Cu2SnSe3 films Full Text
AUTORES: Hema H Chandra; Lakshmana L Kumar; Prasada P Rao; Uthanna, S;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF MATERIALS SCIENCE, VOLUME: 46, NÚMERO: 21
AUTORES: Hema H Chandra; Lakshmana L Kumar; Prasada P Rao; Uthanna, S;
PUBLICAÇÃO: 2011, FONTE: JOURNAL OF MATERIALS SCIENCE, VOLUME: 46, NÚMERO: 21
7
TÃTULO: Growth of highly (111) oriented Culn(0.75)Al(0.25)Se(2) thin films Full Text
AUTORES: Hema H Chandra; Udayakumar, C; Padhy, N; Uthanna, S;
PUBLICAÇÃO: 2010, FONTE: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 13, NÚMERO: 4
AUTORES: Hema H Chandra; Udayakumar, C; Padhy, N; Uthanna, S;
PUBLICAÇÃO: 2010, FONTE: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 13, NÚMERO: 4
8
TÃTULO: Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels Full Text
AUTORES: Kaleemulla, S; Madhusudhana M Rao; Girish G Joshi; Sivasankar S Reddy; Uthanna, S; Sreedhara S Reddy;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF ALLOYS AND COMPOUNDS, VOLUME: 504, NÚMERO: 2
AUTORES: Kaleemulla, S; Madhusudhana M Rao; Girish G Joshi; Sivasankar S Reddy; Uthanna, S; Sreedhara S Reddy;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF ALLOYS AND COMPOUNDS, VOLUME: 504, NÚMERO: 2
9
TÃTULO: Physical properties of In2O3 thin films prepared at various oxygen partial pressures Full Text
AUTORES: Kaleemulla, S; Sivasankar S Reddy; Uthanna, S; Sreedhara S Reddy;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF ALLOYS AND COMPOUNDS, VOLUME: 479, NÚMERO: 1-2
AUTORES: Kaleemulla, S; Sivasankar S Reddy; Uthanna, S; Sreedhara S Reddy;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF ALLOYS AND COMPOUNDS, VOLUME: 479, NÚMERO: 1-2
