N. V. Abrosimov
AuthID: R-007-15K
1
TÃTULO: Isotopic fingerprints of Pt-containing luminescence centers in highly enriched Si-28
AUTORES: Steger, M; Yang, A; Sekiguchi, T; Saeedi, K; Thewalt, MLW; Henry, MO; Johnston, K; Alves, E ; Wahl, U ; Riemann, H; Abrosimov, NV; Churbanov, MF; Gusev, AV; Kaliteevskii, AK; Godisov, ON; Becker, P; J Pohl;
PUBLICAÇÃO: 2010, FONTE: PHYSICAL REVIEW B, VOLUME: 81, NÚMERO: 23
AUTORES: Steger, M; Yang, A; Sekiguchi, T; Saeedi, K; Thewalt, MLW; Henry, MO; Johnston, K; Alves, E ; Wahl, U ; Riemann, H; Abrosimov, NV; Churbanov, MF; Gusev, AV; Kaliteevskii, AK; Godisov, ON; Becker, P; J Pohl;
PUBLICAÇÃO: 2010, FONTE: PHYSICAL REVIEW B, VOLUME: 81, NÚMERO: 23
2
TÃTULO: Vacancy-dioxygen centers in Si-rich SiGe alloys Full Text
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
3
TÃTULO: Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys
AUTORES: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLICAÇÃO: 2004, FONTE: PHYSICAL REVIEW B, VOLUME: 69, NÚMERO: 12
AUTORES: Markevich, VP; Peaker, AR; Coutinho, J ; Jones, R; Torres, VJB ; Oberg, S; Briddon, PR; Murin, LI; Dobaczewski, L; Abrosimov, NV;
PUBLICAÇÃO: 2004, FONTE: PHYSICAL REVIEW B, VOLUME: 69, NÚMERO: 12
4
TÃTULO: Electronic properties of vacancy-oxygen complexes in SiGe alloys Full Text
AUTORES: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
AUTORES: Markevich, VP; Peaker, AR; Murin, LI; Coutinho, J ; Torres, VJB ; Jones, R; Oberg, S; Briddon, PR; Auret, FD; Abrosimov, NV;
PUBLICAÇÃO: 2003, FONTE: 22nd International Conference on Defects in Semiconductors (ICDS-22) in PHYSICA B-CONDENSED MATTER, VOLUME: 340
5
TÃTULO: The use of the X-ray anomalous transmission effect in the structure investigation of high-temperature superconductors Full Text
AUTORES: Bdikin, IK ; Shmyt'ko, IM; Sh S Shekhtman; Abrosimov, NV; Emel'chenko, GA; Yu A Ossipyan;
PUBLICAÇÃO: 1992, FONTE: Physica C: Superconductivity and its applications, VOLUME: 201, NÚMERO: 1-2
AUTORES: Bdikin, IK ; Shmyt'ko, IM; Sh S Shekhtman; Abrosimov, NV; Emel'chenko, GA; Yu A Ossipyan;
PUBLICAÇÃO: 1992, FONTE: Physica C: Superconductivity and its applications, VOLUME: 201, NÚMERO: 1-2
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