Yu. V. Pomozov
AuthID: R-00F-BE6
1
TÃTULO: Complexes of self-interstitials with oxygen atoms in germanium Full Text
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, M; Markevich, VP; Murin, LI; Litvinov, VV; Carvalho, A; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, M; Markevich, VP; Murin, LI; Litvinov, VV; Carvalho, A; Jones, R; Coutinho, J ; Oberg, S; Briddon, PR;
PUBLICAÇÃO: 2008, FONTE: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 11, NÚMERO: 5-6
2
TÃTULO: Formation of interstitial carbon-interstitial oxygen complexes in silicon: Local vibrational mode spectroscopy and density functional theory
AUTORES: Khirunenko, LI; Sosnin, MG; Yu. V Pomozov; Murin, LI; Markevich, VP; Peaker, AR; Almeida, LM; Coutinho, J ; Torres, VJB ;
PUBLICAÇÃO: 2008, FONTE: PHYSICAL REVIEW B, VOLUME: 78, NÚMERO: 15
AUTORES: Khirunenko, LI; Sosnin, MG; Yu. V Pomozov; Murin, LI; Markevich, VP; Peaker, AR; Almeida, LM; Coutinho, J ; Torres, VJB ;
PUBLICAÇÃO: 2008, FONTE: PHYSICAL REVIEW B, VOLUME: 78, NÚMERO: 15
3
TÃTULO: Interstitial carbon-related defects in Si1-xGex alloys
AUTORES: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
AUTORES: Khirunenko, LI; Yu V Pomozov; Sosnin, MG; Duvanskii, A; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2008, FONTE: 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 131-133
INDEXADO EM: 
Scopus
Scopus4
TÃTULO: Vacancy-dioxygen centers in Si-rich SiGe alloys Full Text
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
AUTORES: Khirunenko, LI; Yu. V Pomozov; Sosnin, MG; Trypachko, MO; Torres, VJB ; Coutinho, J ; Jones, R; Briddon, PR; Abrosimov, NV; Riemann, H;
PUBLICAÇÃO: 2006, FONTE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 4-5
5
TÃTULO: Local vibrations of interstitial carbon in SiGe alloys Full Text
AUTORES: L.I Khirunenko; Yu.V Pomozov; M.G Sosnin; M.O Trypachko; Duvanskii, A; V.J.B Torres; Coutinho, J; Jones, R; P.R Briddon; N.V Abrosimov; Riemann, H;
PUBLICAÇÃO: 2006, FONTE: Materials Science in Semiconductor Processing, VOLUME: 9, NÚMERO: 4-5
AUTORES: L.I Khirunenko; Yu.V Pomozov; M.G Sosnin; M.O Trypachko; Duvanskii, A; V.J.B Torres; Coutinho, J; Jones, R; P.R Briddon; N.V Abrosimov; Riemann, H;
PUBLICAÇÃO: 2006, FONTE: Materials Science in Semiconductor Processing, VOLUME: 9, NÚMERO: 4-5
INDEXADO EM: 
CrossRef
CrossRef