Pierre Ruterana
AuthID: R-006-JQQ
11
TÃTULO: Structural and optical characterization of Eu-implanted GaN Full Text
AUTORES: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, NÚMERO: 16
AUTORES: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, NÚMERO: 16
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TÃTULO: A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 degrees C Full Text
AUTORES: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2008, FONTE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, NÚMERO: 1-3
AUTORES: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2008, FONTE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, NÚMERO: 1-3
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TÃTULO: A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation Full Text
AUTORES: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2008, FONTE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, NÚMERO: 1
AUTORES: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2008, FONTE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, NÚMERO: 1
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TÃTULO: Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation Full Text
AUTORES: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, NÚMERO: 7
AUTORES: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, NÚMERO: 7
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TÃTULO: The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer Full Text
AUTORES: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6
AUTORES: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6
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TÃTULO: Behaviour of the AlN cap during GaN implantation of rare earths and annealing Full Text
AUTORES: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, NÚMERO: 9
AUTORES: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, NÚMERO: 9
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TÃTULO: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTORES: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, NÚMERO: 7
AUTORES: Wojtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: 6th International Conference on Nitride Semiconductors (ICNS-6) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 243, NÚMERO: 7
INDEXADO EM: 
Scopus 
WOS
Scopus WOS18
TÃTULO: High temperature annealing of rare earth implanted GaN films: Structural and optical properties Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Nogales, E; Dalmasso, S; Martin, RW; O'Donnell, KP; Wojdak, M; Braud, A; Monteiro, T ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7
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TÃTULO: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2006, FONTE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, NÚMERO: 7
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2006, FONTE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, NÚMERO: 7
INDEXADO EM: 
CrossRef
CrossRef20
TÃTULO: TEM investigation of Tm implanted GaN, the influence of high temperature annealing Full Text
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2006, FONTE: Optical Materials, VOLUME: 28, NÚMERO: 6-7
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2006, FONTE: Optical Materials, VOLUME: 28, NÚMERO: 6-7
INDEXADO EM: CrossRef
CrossRef