K. G. Mcguigan
AuthID: R-006-PN4
1
TÃTULO: Radioactive isotope identifications of Au and Pt photoluminescence centres in silicon Full Text
AUTORES: Henry, MO; Alves, E ; Bollmann, J; Burchard, A; Deicher, M; Fanciulli, M; Forkel Wirth, D; Knopf, MH; Lindner, S; Magerle, R; McGlynn, E; McGuigan, KG; Soares, JC ; Stotzler, A; Weyer, G;
PUBLICAÇÃO: 1998, FONTE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, NÚMERO: 2
AUTORES: Henry, MO; Alves, E ; Bollmann, J; Burchard, A; Deicher, M; Fanciulli, M; Forkel Wirth, D; Knopf, MH; Lindner, S; Magerle, R; McGlynn, E; McGuigan, KG; Soares, JC ; Stotzler, A; Weyer, G;
PUBLICAÇÃO: 1998, FONTE: 8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 210, NÚMERO: 2
2
TÃTULO: Photoluminescence study of cadmium-related defects in oxygen-rich silicon
AUTORES: McGlynn, E; Henry, MO; McGuigan, KG; doCarmo, MC;
PUBLICAÇÃO: 1996, FONTE: PHYSICAL REVIEW B, VOLUME: 54, NÚMERO: 20
AUTORES: McGlynn, E; Henry, MO; McGuigan, KG; doCarmo, MC;
PUBLICAÇÃO: 1996, FONTE: PHYSICAL REVIEW B, VOLUME: 54, NÚMERO: 20
3
TÃTULO: A complex luminescent defect in Be-doped oxygen-rich silicon
AUTORES: Daly, SE; Henry, MO; McGuigan, KG; doCarmo, MC;
PUBLICAÇÃO: 1996, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, NÚMERO: 7
AUTORES: Daly, SE; Henry, MO; McGuigan, KG; doCarmo, MC;
PUBLICAÇÃO: 1996, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, NÚMERO: 7
4
TÃTULO: A photoluminescence study of a series of closely related axial defects of monoclinic I and rhombic I symmetry in oxygen-rich, zinc-doped silicon
AUTORES: McGuigan, KG; Henry, MO; Campion, JD; Daly, SE; McGlynn, E; DoCarmo, MC;
PUBLICAÇÃO: 1996, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, NÚMERO: 6
AUTORES: McGuigan, KG; Henry, MO; Campion, JD; Daly, SE; McGlynn, E; DoCarmo, MC;
PUBLICAÇÃO: 1996, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, NÚMERO: 6
5
TÃTULO: Oxygen complexing with group II impurities in silicon
AUTORES: Daly, SE; McGlynn, E; Henry, MO; Campion, JD; McGuigan, KG; DoCarmo, MC; Nazare, MH;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-
AUTORES: Daly, SE; McGlynn, E; Henry, MO; Campion, JD; McGuigan, KG; DoCarmo, MC; Nazare, MH;
PUBLICAÇÃO: 1995, FONTE: 18th International Conference on Defects in Semiconductors (ICDS-18) in ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, VOLUME: 196-
INDEXADO EM: 
WOS
WOS6
TÃTULO: A PHOTOLUMINESCENCE STUDY OF ZN-O COMPLEXES IN SILICON
AUTORES: HENRY, MO; CAMPION, JD; MCGUIGAN, KG; LIGHTOWLERS, EC; DOCARMO, MC; NAZARE, MH;
PUBLICAÇÃO: 1994, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 9, NÚMERO: 7
AUTORES: HENRY, MO; CAMPION, JD; MCGUIGAN, KG; LIGHTOWLERS, EC; DOCARMO, MC; NAZARE, MH;
PUBLICAÇÃO: 1994, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 9, NÚMERO: 7
INDEXADO EM: WOS
WOS7
TÃTULO: A PHOTOLUMINESCENCE INVESTIGATION OF LOCAL MODE VIBRATIONS OF THE BERYLLIUM PAIR CENTER IN SILICON
AUTORES: HENRY, MO; MCGUIGAN, KG; DOCARMO, MC; NAZARE, MH; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1990, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 2, NÚMERO: 48
AUTORES: HENRY, MO; MCGUIGAN, KG; DOCARMO, MC; NAZARE, MH; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1990, FONTE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 2, NÚMERO: 48
INDEXADO EM: WOS
WOS8
TÃTULO: UNIAXIAL-STRESS AND ZEEMAN MEASUREMENTS ON THE 943 MEV LUMINESCENCE BAND IN SILICON
AUTORES: CARMO, MC; MCGUIGAN, KG; HENRY, MO; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1990, FONTE: SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, VOLUME: 163
AUTORES: CARMO, MC; MCGUIGAN, KG; HENRY, MO; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1990, FONTE: SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, VOLUME: 163
INDEXADO EM: WOS
WOS9
TÃTULO: A UNIAXIAL-STRESS STUDY OF A COPPER-RELATED PHOTOLUMINESCENCE BAND IN SILICON Full Text
AUTORES: MCGUIGAN, KG; HENRY, MO; CARMO, MC; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
AUTORES: MCGUIGAN, KG; HENRY, MO; CARMO, MC; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
INDEXADO EM: 
Scopus WOS
Scopus WOS