Eduardo Jorge da Costa Alves
AuthID: R-000-4EK
201
TÃTULO: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers Full Text
AUTORES: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF LUMINESCENCE, VOLUME: 178
AUTORES: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF LUMINESCENCE, VOLUME: 178
202
TÃTULO: Anisotropy of electrical conductivity in dc due to intrinsic defect formation in alpha-Al2O3 single crystal implanted with Mg ions Full Text
AUTORES: Tardio, M; Egana, A; Ramirez, R; Munoz Santiuste, JE; Alves, E;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
AUTORES: Tardio, M; Egana, A; Ramirez, R; Munoz Santiuste, JE; Alves, E;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
INDEXADO EM: 
WOS
WOS NO MEU: 
ORCID
ORCID203
TÃTULO: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices Full Text
AUTORES: Faye, DN; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
AUTORES: Faye, DN; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
204
TÃTULO: Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
AUTORES: Lorenz, K; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
AUTORES: Lorenz, K; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
205
TÃTULO: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers Full Text
AUTORES: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, NÚMERO: 8
AUTORES: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K; Alves, E; Monteiro, T;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, NÚMERO: 8
206
TÃTULO: Anisotropy of electrical conductivity in dc due to intrinsic defect formation in α-Al<inf>2</inf>O<inf>3</inf> single crystal implanted with Mg ions
AUTORES: Tardío M.; Egaña A.; Ramírez R.; Muñoz-Santiuste J.E.; Alves E.;
PUBLICAÇÃO: 2016, FONTE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 379
AUTORES: Tardío M.; Egaña A.; Ramírez R.; Muñoz-Santiuste J.E.; Alves E.;
PUBLICAÇÃO: 2016, FONTE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 379
207
TÃTULO: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al 0.15 Ga 0.85 N Full Text
AUTORES: Magalhães, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2016, FONTE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 49, NÚMERO: 13
AUTORES: Magalhães, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2016, FONTE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 49, NÚMERO: 13
208
TÃTULO: Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium Full Text
AUTORES: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, NÚMERO: 16
AUTORES: Fialho, M; Magalhaes, S; Chauvat, MP; Ruterana, P; Lorenz, K; Alves, E;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, NÚMERO: 16
209
TÃTULO: High Orbital Angular Momentum Harmonic Generation
AUTORES: Vieira, J; Trines, RMGM; Alves, EP; Fonseca, RA; Mendonca, JT; Bingham, R; Norreys, P; Silva, LO;
PUBLICAÇÃO: 2016, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 117, NÚMERO: 26
AUTORES: Vieira, J; Trines, RMGM; Alves, EP; Fonseca, RA; Mendonca, JT; Bingham, R; Norreys, P; Silva, LO;
PUBLICAÇÃO: 2016, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 117, NÚMERO: 26
210
TÃTULO: The role and application of ion beam analysis for studies of plasma-facing components in controlled fusion devices
AUTORES: Rubel, M; Petersson, P; Alves, E; Brezinsek, S; Coad, JP; Heinola, K; Mayer, M; Widdowson, A;
PUBLICAÇÃO: 2016, FONTE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 371
AUTORES: Rubel, M; Petersson, P; Alves, E; Brezinsek, S; Coad, JP; Heinola, K; Mayer, M; Widdowson, A;
PUBLICAÇÃO: 2016, FONTE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 371
INDEXADO EM: 
Scopus
Scopus NO MEU: ORCID
ORCID